发明申请
- 专利标题： Non-volatile semiconductor memory device and process of manufacturing the same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US11580929申请日： 2006-10-16
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公开(公告)号： US20070029578A1公开(公告)日： 2007-02-08
- 发明人: Toshitake Yaegashi , Koki Ueno
- 申请人： Toshitake Yaegashi , Koki Ueno
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2004-148163 20040518
- 主分类号： H01L29/768
- IPC分类号： H01L29/768 ; H01L27/148 ; H01L29/74
摘要：
In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.
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