发明申请
- 专利标题: Method to obtain fully silicided poly gate
- 专利标题(中): 获得完全硅化多孔的方法
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申请号: US11201924申请日: 2005-08-11
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公开(公告)号: US20070037342A1公开(公告)日: 2007-02-15
- 发明人: Freidoon Mehrad , Shaofeng Yu , Joe Tran
- 申请人: Freidoon Mehrad , Shaofeng Yu , Joe Tran
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments, Incorporated
- 当前专利权人: Texas Instruments, Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/336 ; H01L21/4763 ; H01L21/3205
摘要:
The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a capping layer 610 over gate structures 230 located over a microelectronics substrate 210 wherein the gate structures 230 include sidewall spacers 515 and have a doped region 525 located between them. A protective layer 710 is placed over the capping layer 610 and the doped region 525, and a portion of the protective layer 710 and capping layer 610 that are located over the gate structures are removed to expose a top surface of the gate structures 230. A remaining portion of the protective layer 710 and capping layer 610 remains over the doped region 525. With the top surface of the gate structures 230 exposed, metal is incorporated into the gate structures to form gate electrodes 230.
公开/授权文献
- US07396716B2 Method to obtain fully silicided poly gate 公开/授权日:2008-07-08