摘要:
The invention provides compounds of general formula (I) that inhibit selected kinases (Pim and/or CK2 kinases) and compositions containing such compounds. These compounds and compositions are useful for treating proliferative disorders such as cancer, as well as other kinase-associated conditions including inflammation, pain, and certain infections and immunological disorders.
摘要:
The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a capping layer 610 over gate structures 230 located over a microelectronics substrate 210 wherein the gate structures 230 include sidewall spacers 515 and have a doped region 525 located between them. A protective layer 710 is placed over the capping layer 610 and the doped region 525, and a portion of the protective layer 710 and capping layer 610 that are located over the gate structures are removed to expose a top surface of the gate structures 230. A remaining portion of the protective layer 710 and capping layer 610 remains over the doped region 525. With the top surface of the gate structures 230 exposed, metal is incorporated into the gate structures to form gate electrodes 230.
摘要:
A method for removing material from the surface of a semiconductor wafer with a chemical mechanical polishing process is described. The method uses a polishing pad on which a line-pattern of grooves is formed. The pattern comprises orderly spaced grooved-area and area without grooves. The method combines information of the surface topography of the wafer, the nature of the material to be removed, and the available groove pattern on the surface of the polishing pad to generate a process recipe in which the resident time of portions of the semiconductor wafer spends at the grooved and un-grooved areas of the polishing pad during the chemical mechanical polishing process is pre-determined.
摘要:
The invention provides compounds of general formula (I) that inhibit selected kinases (Pim and/or CK2 kinases) and compositions containing such compounds. These compounds and compositions are useful for treating proliferative disorders such as cancer, as well as other kinase-associated conditions including inflammation, pain, and certain infections and immunological disorders.
摘要:
A method for removing material from the surface of a semiconductor wafer with a chemical mechanical polishing process is described. The method uses a polishing pad on which a line-pattern of grooves is formed. The pattern comprises orderly spaced grooved-area and area without grooves. The method combines information of the surface topography of the wafer, the nature of the material to be removed, and the available groove pattern on the surface of the polishing pad to generate a process recipe in which the resident time of portions of the semiconductor wafer spends at the grooved and un-grooved areas of the polishing pad during the chemical mechanical polishing process is pre-determined.
摘要:
A system (500) removes wafer edge residue from a target wafer (508). A wafer holding mechanism (502) holds and rotates the target wafer (508). A residue remover mechanism (504) mechanically interacts or abrades an edge surface of the target wafer (508) and removes strongly adhered residue from the edge surface of the target wafer (508). The residue remover mechanism (504) controls coverage of the mechanical interaction and magnitude of the mechanical interaction.
摘要:
Compounds which function as melanocortin receptor ligands and having utility in the treatment of melanocortin receptor-based disorders. The compounds have the following structure (I): including stereoisomers, prodrugs, and pharmaceutically acceptable salts thereof, wherein m, n, q, s, R1, R1a, R1b, R2, R3, R4a, R4b, R5a, R5b, X1, X2, X3, X4 and Ar are as defined herein. Pharmaceutical compositions containing a compound of structure (I), as well as methods relating to the use thereof, are also disclosed.
摘要翻译:作为黑皮质素受体配体起作用并可用于治疗基于黑皮质素受体的疾病的化合物。 所述化合物具有以下结构(I):包括其立体异构体,前药和药学上可接受的盐,其中m,n,q,s,R 1,R 1a, R 1b,R 2,R 3,R 4a,R 4b, R 5a,R 5b,X 1,X 2,X 3, X 4和Ar如本文所定义。 还公开了含有结构(I)化合物的药物组合物以及与其用途有关的方法。
摘要:
A method for removing material from the surface of a semiconductor wafer with a chemical mechanical polishing process is described. The method uses a polishing pad on which a line-pattern of grooves is formed. The pattern comprises orderly spaced grooved-area and area without grooves. The method combines information of the surface topography of the wafer, the nature of the material to be removed, and the available groove pattern on the surface of the polishing pad to generate a process recipe in which the resident time of portions of the semiconductor wafer spends at the grooved and un-grooved areas of the polishing pad during the chemical mechanical polishing process is pre-determined.
摘要:
A method for making a transistor 20 that includes using a transition metal nitride layer 200 and/or a SOG layer 220 to protect the source/drain regions 60 from silicidation during the silicidation of the gate electrode 90. The SOG layer 210 is planarized to expose the transition metal nitride layer 200 or the gate electrode 93 before the gate silicidation process. If a transition metal nitride layer 200 is used, then it is removed from the top of the gate electrode 93 before the full silicidation of the gate electrode 90.
摘要:
The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a spacer material 160 over gate electrodes 150 that are, in turn, located over a microelectronics substrate 110. The gate electrodes 150 have a doped region 170a located between them. A portion of the spacer material 160 is removed with a chemical/mechanical process using a slurry that is selective to a portion of the spacer material 160. The method further comprises etching a remaining portion of the spacer material 163, 165, 168 to form spacer sidewalls 163, 165, 168 on the gate electrodes 150. The etching exposes a surface of the gate electrodes 150 and leaves a portion of the spacer material 168 over the doped region 170a. Metal is then incorporated into the gate electrodes 150 to form silicided gate electrodes 150.