发明申请
- 专利标题： Reduced refractive index and extinction coefficient layer for enhanced photosensitivity
- 专利标题（中）： 降低折射率和消光系数层，提高光敏性
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申请号： US11291880申请日： 2005-12-01
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公开(公告)号： US20070048965A1公开(公告)日： 2007-03-01
- 发明人: Yuan-Chih Hsieh , Chung-Yi Yu , Tsung-Hsun Huang , Tzu-Hsuan Hsu , Chia-Shiung Tsai
- 申请人： Yuan-Chih Hsieh , Chung-Yi Yu , Tsung-Hsun Huang , Tzu-Hsuan Hsu , Chia-Shiung Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
An image sensor device includes a semiconductor substrate and a plurality of pixels on the substrate. An etch-stop layer is formed over the pixels and has a thickness less than about 600 Angstroms. The image sensor device further includes an interlayer dielectric (ILD) overlying the etch stop layer. The etch-stop layer has a refractive index less than about 2 and an extinction coefficient less than about 0.1.
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