发明申请
US20070049034A1 High aspect ratio gap fill application using high density plasma chemical vapor deposition
有权
使用高密度等离子体化学气相沉积的高纵横比间隙填充应用
- 专利标题： High aspect ratio gap fill application using high density plasma chemical vapor deposition
- 专利标题（中）： 使用高密度等离子体化学气相沉积的高纵横比间隙填充应用
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申请号： US11218695申请日： 2005-09-01
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公开(公告)号： US20070049034A1公开(公告)日： 2007-03-01
- 发明人: Joung-Wei Liou , Tsang-Yu Liu , Chien-Feng Lin , Cheng-Liang Chang , Ming-Te Chen , Chia-Hui Lin , Ying-Hsiu Tsai , Szu-An Wu , Yin-Ping Lee
- 申请人： Joung-Wei Liou , Tsang-Yu Liu , Chien-Feng Lin , Cheng-Liang Chang , Ming-Te Chen , Chia-Hui Lin , Ying-Hsiu Tsai , Szu-An Wu , Yin-Ping Lee
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; C23C16/00
摘要：
A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.
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