发明申请
US20070058322A1 Plasma processing apparatus and method of suppressing abnormal discharge therein
有权
等离子体处理装置及其中抑制异常放电的方法
- 专利标题: Plasma processing apparatus and method of suppressing abnormal discharge therein
- 专利标题(中): 等离子体处理装置及其中抑制异常放电的方法
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申请号: US11514267申请日: 2006-09-01
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公开(公告)号: US20070058322A1公开(公告)日: 2007-03-15
- 发明人: Natsuko Ito , Mitsuo Yasaka , Fumihiko Uesugi , Yousuke Itagaki
- 申请人: Natsuko Ito , Mitsuo Yasaka , Fumihiko Uesugi , Yousuke Itagaki
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 优先权: JP2005-258157 20050906
- 主分类号: H01T23/00
- IPC分类号: H01T23/00
摘要:
In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.
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