公开(公告)号：US07974067B2

公开(公告)日：2011-07-05

申请号：US11514267

申请日：2006-09-01

申请人： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

发明人： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01J2237/0206

摘要： In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.

摘要翻译： 在具有用于通过静电吸附力保持半导体晶片的静电卡盘和用于向静电卡盘施加静电吸附电压的DC电源的等离子体处理装置中，通过向装置提供信号检测器来抑制等离子体的异常放电， 检测预期在等离子体中发生异常放电的预见信号，以及基于预见信号控制ESC泄漏电流的控制器。 如果预见信号在规定范围之外，则进行控制以减小静电吸附电压的绝对值，从而抑制异常放电的发生。

公开(公告)号：US20070058322A1

公开(公告)日：2007-03-15

申请号：US11514267

申请日：2006-09-01

申请人： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

发明人： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

IPC分类号： H01T23/00

CPC分类号： H01L21/6833 ,  H01J2237/0206

摘要： In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.

摘要翻译： 在具有用于通过静电吸附力保持半导体晶片的静电卡盘和用于向静电卡盘施加静电吸附电压的DC电源的等离子体处理装置中，通过向装置提供信号检测器来抑制等离子体的异常放电， 检测预期在等离子体中发生异常放电的预见信号，以及基于预见信号控制ESC泄漏电流的控制器。 如果预见信号在规定范围之外，则进行控制以减小静电吸附电压的绝对值，从而抑制异常放电的发生。

公开(公告)号：US20080041306A1

公开(公告)日：2008-02-21

申请号：US11769919

申请日：2007-06-28

申请人： Yousuke ITAGAKI ,  Natsuko Ito ,  Fumihiko Uesugi

发明人： Yousuke ITAGAKI ,  Natsuko Ito ,  Fumihiko Uesugi

IPC分类号： B05C11/00

CPC分类号： C23C16/4404 ,  H01J37/09 ,  H01J37/16 ,  H01J37/32467 ,  H01J37/32477 ,  H01J2237/022 ,  H01J2237/026

摘要： An apparatus includes a housing defining a chamber in which an electric field is generated, and an internal member provided in the chamber. At least one part of the internal member is formed of a dielectric material. A process is executed in the chamber so that a dielectric deposit is formed on the at least one part of the internal member. An m1(d∈1/dm1) value of the dielectric material and ∈n m2(d∈2/dm2) value of the dielectric deposit are set so that production of particles from the deposit is properly controlled. The term m1 is a mass density of the dielectric material, ∈1 is a permittivity of the dielectric material, m2 is a mass density of the dielectric deposit, and ∈2 is a permittivity of the dielectric deposit.

摘要翻译： 一种装置包括限定其中产生电场的室的壳体和设置在室中的内部构件。 内部构件的至少一部分由电介质材料形成。 在室中执行处理，使得在内部构件的至少一个部分上形成介电沉积物。 电介质材料的m 1（d∈1 / dm 1）值和∈nm2（d 设置介电沉积物的∈2 2/2 2 N值，以便适当地控制来自沉积物的颗粒的产生。 术语m 1是电介质材料的质量密度，ε1是电介质材料的介电常数，m 2是质量密度 的介电沉积物，ε2是介电沉积物的介电常数。

公开(公告)号：US08051799B2

公开(公告)日：2011-11-08

申请号：US11769919

申请日：2007-06-28

申请人： Yousuke Itagaki ,  Natsuko Ito ,  Fumihiko Uesugi

发明人： Yousuke Itagaki ,  Natsuko Ito ,  Fumihiko Uesugi

IPC分类号： B05C11/00

CPC分类号： C23C16/4404 ,  H01J37/09 ,  H01J37/16 ,  H01J37/32467 ,  H01J37/32477 ,  H01J2237/022 ,  H01J2237/026

摘要： An apparatus includes a housing defining a chamber in which an electric field is generated, and an internal member provided in the chamber. At least one part of the internal member is formed of a dielectric material. A process is executed in the chamber so that a dielectric deposit is formed on the at least one part of the internal member. An m1(d∈1/dm1) value of the dielectric material and an m2(d∈2/dm2) value of the dielectric deposit are set so that production of particles from the deposit is properly controlled. The term m1 is a mass density of the dielectric material, ∈1 is a permittivity of the dielectric material, m2 is a mass density of the dielectric deposit, and ∈2 is a permittivity of the dielectric deposit.

摘要翻译： 一种装置包括限定其中产生电场的室的壳体和设置在室中的内部构件。 内部构件的至少一部分由电介质材料形成。 在室中执行处理，使得在内部构件的至少一个部分上形成介电沉积物。 电介质材料的m1（d∈1/ dm1）值和电介质沉积物的m2（d∈2/ dm2）值被设定为使得从沉积物中产生的颗粒被适当地控制。 术语m1是介电材料的质量密度，ε1是介电材料的介电常数，m2是介电沉积物的质量密度，∈2是电介质沉积物的介电常数。

公开(公告)号：US20080233756A1

公开(公告)日：2008-09-25

申请号：US12154521

申请日：2008-05-23

申请人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

发明人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

IPC分类号： H01L21/3065

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01L21/67069

摘要： In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.

摘要翻译： 在通过向气体施加电压以产生等离子体来处理衬底的半导体器件制造装置中，通过施加负电压的电极在正极电压停止的时刻捕获或引导带正电的粒子， 以防止颗粒到达基板。

公开(公告)号：US6115120A

公开(公告)日：2000-09-05

申请号：US413590

申请日：1999-10-06

申请人： Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Natsuko Ito

发明人： Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Natsuko Ito

IPC分类号： G01N15/00 ,  G01N15/02 ,  G01N21/53 ,  H01L21/66 ,  G01N21/00

CPC分类号： G01N15/0227 ,  G01N21/53

摘要： Particles generated within a semiconductor wafer process chamber are monitored by emitting a rastered laser beam into the process chamber and detecting a two-dimensional image of scattered radiant energy within the process chamber. A video frame representing a matrix array of pixel intensities is produced and processed by a processor. The processor receives first and second video frames, the first frame representing a matrix array of pixels of a background image of the process chamber before a wafer processing is started and the second frame representing a matrix array of corresponding pixels of a target image of the process changer after a wafer processing is started. Differential intensities between the pixels of the background image and corresponding pixels of the target image are detected and a decision is made on the detected intensities to produce an output signal representing presence or absence of the particles.

摘要翻译： 在半导体晶片处理室内产生的颗粒通过将成像激光束发射到处理室中并检测处理室内的散射辐射能的二维图像来监测。 表示像素强度的矩阵阵列的视频帧由处理器产生和处理。 处理器接收第一和第二视频帧，第一帧表示在晶片处理开始之前处理室的背景图像的矩阵阵列，并且第二帧表示处理的目标图像的对应像素的矩阵阵列 在晶片处理开始之后更换器。 检测背景图像的像素与目标图像的对应像素之间的差分强度，并且对所检测的强度进行判定，以产生表示颗粒存在或不存在的输出信号。

公开(公告)号：US6042650A

公开(公告)日：2000-03-28

申请号：US70750

申请日：1998-05-01

申请人： Fumihiko Uesugi ,  Natsuko Ito

发明人： Fumihiko Uesugi ,  Natsuko Ito

IPC分类号： G01N15/00 ,  C23C16/52 ,  G01N21/47 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  B05C11/00

CPC分类号： H01L21/67253 ,  C23C16/52

摘要： A part of the outer wall of the processing chamber supplied with an active gas for an intended processing forms a protruding section extending out from the outer wall into the air. An incident side window through which laser light is guided is mounted to the protruding portion. A baffle is provided inside the protruding portion for intercepting unnecessary portion of light guided in the processing chamber even if irregularly reflecting light arises, when laser light is guided into the window. An antireflection coating is coated on the air side surface of the window. A purge gas inlet port for blowing out a purge gas along the inside surface of the window is formed in the protruding portion. Therefore, a deposit caused by a process gas on the chamber inside surface of an incident side window and the surface of a stopper for beam light is prevented from producing, thereby the inside of the chamber is not contaminated and weak scattered light from a fine particle floating or falling down in the chamber can be measured.

摘要翻译： 供给用于预期处理的活性气体的处理室的外壁的一部分形成从外壁延伸到空气中的突出部分。 激光引导的入射侧窗安装在突出部上。 在突出部分内设置有挡板，用于在激光被引导到窗口中时，即使不规则地反射光，也可以拦截在处理室中引导的光的不必要部分。 在窗的空气侧表面上涂覆抗反射涂层。 在突出部分形成有用于沿着窗的内表面吹出吹扫气体的净化气体入口。 因此，防止了入射侧窗的室内表面中的处理气体和光束用挡块的表面产生的沉积物，从而不会污染室内，并且微粒的弱散射光 可以测量室内漂浮或落下。

公开(公告)号：US5861951A

公开(公告)日：1999-01-19

申请号：US989630

申请日：1997-12-12

申请人： Fumihiko Uesugi ,  Natsuko Ito

发明人： Fumihiko Uesugi ,  Natsuko Ito

IPC分类号： G01N15/06 ,  G01N15/02 ,  G01N15/14 ,  G01N21/88 ,  G01N21/94 ,  G01N21/956 ,  H01L21/66 ,  G01N21/00

CPC分类号： G01N15/0211

摘要： When a intensity of a signal from a light detector 14 to measure a scattered light exceeds a predetermined value, a motion of a particle 20 is displayed as a locus of the scattered light, by means of extending an exposure time of the scattered light to the light detector, or by means of increasing a pulse oscillation frequency of a laser beam 13, or by means of extending a pulse width of the laser light. And then a straight line connecting start and terminal points of the locus is displayed to superimpose on the locus. An origin of the particle is estimated by extending the straight line beyond the start point, and a destination point of the particle is estimated by extending the straight line beyond the terminal point. A mass of the particle is estimated by dividing a projective length of the straight line in a vertical direction by the exposure time of the scattered light.

摘要翻译： 当来自光检测器14的用于测量散射光的信号的强度超过预定值时，通过将散射光的曝光时间延长到散射光的曝光时间，将粒子20的运动显示为散射光的轨迹 光检测器，或通过增加激光束13的脉冲振荡频率，或通过延长激光的脉冲宽度。 然后显示连接轨迹的起点和终点的直线，以叠加在轨迹上。 通过将直线延伸超过起始点来估计粒子的原点，并且通过将直线延伸超过终点来估计粒子的目的点。 通过将垂直方向上的直线的投影长度除以散射光的曝光时间来估计颗粒的质量。

公开(公告)号：US20060131272A1

公开(公告)日：2006-06-22

申请号：US11354506

申请日：2006-02-15

申请人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

发明人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

IPC分类号： C23F1/00

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01L21/67069 ,  Y10S156/916

摘要： In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.

公开(公告)号：US06284049B1

公开(公告)日：2001-09-04

申请号：US09504435

申请日：2000-02-15

申请人： Fumihiko Uesugi ,  Natsuko Ito

发明人： Fumihiko Uesugi ,  Natsuko Ito

IPC分类号： C23C1600

CPC分类号： H01L21/67253 ,  C23C16/52

摘要： A part of the outer wall of the processing chamber supplied with an active gas for an intended processing forms a protruding section extending out from the outer wall into the air. An incident side window through which laser light is guided is mounted to the protruding portion. A baffle is provided inside the protruding portion for intercepting unnecessary portion of light guided in the processing chamber even if irregularly reflecting light arises, when laser light is guided into the window. An antireflection coating is coated on the air side surface of the window. A purge gas inlet port for blowing out a purge gas along the inside surface of the window is formed in the protruding portion. Therefore, a deposit caused by a process gas on the chamber inside surface of an incident side window and the surface of a stopper for beam light is prevented from producing, thereby the inside of the chamber is not contaminated and weak scattered light from a fine particle floating or falling down in the chamber can be measured.

摘要翻译： 供给用于预期处理的活性气体的处理室的外壁的一部分形成从外壁延伸到空气中的突出部分。 激光引导的入射侧窗安装在突出部上。 在突出部分内设置有挡板，用于在激光被引导到窗口中时，即使不规则地反射光，也可以拦截在处理室中引导的光的不必要部分。 在窗的空气侧表面上涂覆抗反射涂层。 在突出部分形成有用于沿着窗的内表面吹出吹扫气体的净化气体入口。 因此，防止了入射侧窗的室内表面中的处理气体和光束用挡块的表面产生的沉积物，从而不会污染室内，并且微粒的弱散射光 可以测量室内漂浮或落下。