公开(公告)号：US06753499B1

公开(公告)日：2004-06-22

申请号：US09980379

申请日：2001-11-28

申请人： Mitsuo Yasaka ,  Masayoshi Takeshita

发明人： Mitsuo Yasaka ,  Masayoshi Takeshita

IPC分类号： B23K1000

CPC分类号： G01N29/38 ,  B01J19/088 ,  B01J19/10 ,  B01J2219/0894 ,  G01H1/00 ,  G01N29/0618 ,  G01N29/14 ,  G01N29/223 ,  G01N29/4436 ,  G01N29/4445 ,  G01N2291/011 ,  G01N2291/015 ,  G01N2291/0258 ,  G01N2291/105 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/34 ,  H01J2237/0206 ,  H05H1/0093

摘要： An anomalous arc discharge detection apparatus, including multiplicity of ultrasonic detectors placed at different sections of a plasma processing chamber such that an ultrasonic wave accompanying an anomalous discharge is detected by the ultrasonic detectors at different propagation times or with different delay times. The detected signals are compared with each other on the same time axis to obtain the maximum range of variation of the detected waveforms and the differences in delay time of the respective ultrasonic detectors. From the comparison of the maximum range of variation and the delay times of the ultrasonic detectors, the position of the source point, and the level as well, of the anomalous arc discharge are determined, which can be displayed on a monitor and utilized to issue an alarm if necessary. The position of the anomalous discharge may be obtained by an asymptotic approximation based on recursive calculations of the distances from the source point to the respective ultrasonic detectors using formulas which define the distances in terms of the delay times. This can be done using only four ultrasonic detectors arranged on the wall of the processing chamber. An AE sensor hold case is provided to accommodate an AE sensor. The hold sensor has a lower cover which has one end to be glued onto an appropriate position of the processing chamber, and an upper cover which pushes the AE sensor against the lower cover with an adequate pressure.

摘要翻译： 一种异常电弧放电检测装置，包括放置在等离子体处理室的不同部分的多个超声波检测器，使得伴随异常放电的超声波在不同的传播时间或不同的延迟时间被超声波检测器检测。 检测出的信号在相同的时间轴上相互比较，以获得检测波形的最大变化范围和各个超声波检测器的延迟时间差。 根据超声波检测器的最大变化范围和延迟时间的比较，确定异常电弧放电的源点位置和电平，可以显示在监视器上并用于发出 必要时发出警报。 可以通过基于使用根据延迟时间定义距离的公式从源点到各个超声波检测器的距离的递归计算的渐近近似来获得异常放电的位置。 这可以仅使用布置在处理室的壁上的四个超声波检测器来完成。 提供AE传感器保持壳以容纳AE传感器。 保持传感器具有下盖，其一端被胶合到处理室的适当位置，以及上盖，以足够的压力将AE传感器推向下盖。

公开(公告)号：US20050194094A1

公开(公告)日：2005-09-08

申请号：US10512141

申请日：2003-03-28

申请人： Mitsuo Yasaka

发明人： Mitsuo Yasaka

IPC分类号： H05H1/00 ,  C23C14/34 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23F1/00

CPC分类号： H01J37/32935

摘要： This invention relates to a detection port type probe, a plasma monitoring device, and a plasma processing apparatus. It is intended to directly and conveniently detect a state of plasma generated by an application of a radio frequency or a high voltage, and the detection port type probe is provided with at least an electroconductive supporting member (5) having an opening formed on at least a part of a surface thereof facing to plasma and a dielectric member (1) having a probe electrode (2) formed on one side thereof positioned at the opening of the electroconductive supporting member (5).

摘要翻译： 本发明涉及检测端口型探针，等离子体监测装置和等离子体处理装置。 旨在直接且方便地检测通过施加射频或高电压产生的等离子体的状态，并且检测端口型探针设置有至少一个导电支撑构件（5），该导电支撑构件至少形成有开口 其面向等离子体的表面的一部分和具有形成在其位于导电支撑构件（5）的开口处的一侧上的探针电极（2）的电介质构件（1）。

公开(公告)号：US07974067B2

公开(公告)日：2011-07-05

申请号：US11514267

申请日：2006-09-01

申请人： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

发明人： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01J2237/0206

摘要： In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.

摘要翻译： 在具有用于通过静电吸附力保持半导体晶片的静电卡盘和用于向静电卡盘施加静电吸附电压的DC电源的等离子体处理装置中，通过向装置提供信号检测器来抑制等离子体的异常放电， 检测预期在等离子体中发生异常放电的预见信号，以及基于预见信号控制ESC泄漏电流的控制器。 如果预见信号在规定范围之外，则进行控制以减小静电吸附电压的绝对值，从而抑制异常放电的发生。

公开(公告)号：US20070058322A1

公开(公告)日：2007-03-15

申请号：US11514267

申请日：2006-09-01

申请人： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

发明人： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

IPC分类号： H01T23/00

CPC分类号： H01L21/6833 ,  H01J2237/0206

摘要： In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.

摘要翻译： 在具有用于通过静电吸附力保持半导体晶片的静电卡盘和用于向静电卡盘施加静电吸附电压的DC电源的等离子体处理装置中，通过向装置提供信号检测器来抑制等离子体的异常放电， 检测预期在等离子体中发生异常放电的预见信号，以及基于预见信号控制ESC泄漏电流的控制器。 如果预见信号在规定范围之外，则进行控制以减小静电吸附电压的绝对值，从而抑制异常放电的发生。