Invention Application
US20070063243A1 Structure Of Embedded Capacitors And Fabrication Method Thereof
审中-公开
嵌入式电容器的结构及其制作方法
- Patent Title: Structure Of Embedded Capacitors And Fabrication Method Thereof
- Patent Title (中): 嵌入式电容器的结构及其制作方法
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Application No.: US11550798Application Date: 2006-10-19
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Publication No.: US20070063243A1Publication Date: 2007-03-22
- Inventor: Wei-Chun Yang , Chien-Wei Chang
- Applicant: Wei-Chun Yang , Chien-Wei Chang
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94 ; H01L29/76 ; H01L31/119

Abstract:
A new structure is provided to replace the existing common planar capacitor structure used in printed circuit boards. The conventional common planar capacitor structure utilizes a single dielectric layer and embedded capacitors with different capacitances are achieved by adjusting the sizes of the embedded capacitors' conductive terminals. Since general applications usually require capacitors whose capacitance range covers several orders of magnitude, these embedded capacitors have significant differences in terms of their conductive terminals' sizes. This will make the manufacturing process more complicated and difficult. The new structure combines inorganic material having a specific dielectric constant and polymer having another specific dielectric constant into a singulated non-overlapping coplanar capacitor structure that is easy to manufacture and provides better precision.
Information query
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