发明申请
- 专利标题： METHOD AND STRUCTURE OF FORMING AN INTERCONNECT INCLUDING A DIELECTRIC CAP HAVING A TENSILE STRESS
- 专利标题（中）： 形成互连的方法和结构，包括具有拉伸应力的电介质盖
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申请号： US11162666申请日： 2005-09-19
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公开(公告)号： US20070063348A1公开(公告)日： 2007-03-22
- 发明人: Chih-Chao Yang , Kaushik Chanda , Lawrence Clevenger , Yun-Yu Wang , Daewon Yang
- 申请人： Chih-Chao Yang , Kaushik Chanda , Lawrence Clevenger , Yun-Yu Wang , Daewon Yang
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned opening, and a dielectric cap overlying the metal feature. The dielectric cap has an internal tensile stress, the stress helping to avoid electromigration from occurring in a direction away from the metal line, especially when the metal line has tensile stress.