发明申请
- 专利标题： High performance flash memory device capable of high density data storage
- 专利标题（中）： 高性能闪存设备能够进行高密度数据存储
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申请号： US11229527申请日： 2005-09-20
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公开(公告)号： US20070064464A1公开(公告)日： 2007-03-22
- 发明人: Tiao-Hua Kuo , Nancy Leong , Nian Yang , Guowei Wang , Aaron Lee , Sachit Chandra , Michael VanBuskirk , Johnny Chen , Darlene Hamilton , Binh Le
- 申请人： Tiao-Hua Kuo , Nancy Leong , Nian Yang , Guowei Wang , Aaron Lee , Sachit Chandra , Michael VanBuskirk , Johnny Chen , Darlene Hamilton , Binh Le
- 主分类号： G11C17/00
- IPC分类号： G11C17/00
摘要：
A method is provided for programming a nonvolatile memory array including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes receiving a programming window containing a predetermined number of bits that are to be programmed in the array and determining which of the predetermined number of bits are to be programmed in the memory array. The predetermined number of bits are simultaneously programmed to corresponding memory cells in the array. A programming state of the predetermined number of bits in the array is simultaneously verified.
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