Method and system for controlling radical distribution

Invention Application

US20070068625A1 Method and system for controlling radical distribution 有权

Title translation: 控制激进分布的方法和系统

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Patent Title: Method and system for controlling radical distribution
Patent Title (中): 控制激进分布的方法和系统
Application No.: US11233025

Application Date: 2005-09-23
Publication No.: US20070068625A1

Publication Date: 2007-03-29
Inventor: Merritt Funk , David Horak , Eric Strang , Lee Chen
Applicant: Merritt Funk , David Horak , Eric Strang , Lee Chen
Applicant Address: JP Tokyo
Assignee: TOKYO ELECTRON LIMITED
Current Assignee: TOKYO ELECTRON LIMITED
Current Assignee Address: JP Tokyo
Main IPC: H01L21/306
IPC: H01L21/306 ; C23C16/00

Method and system for controlling radical distribution

Abstract:

A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract(Chinese):

等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

Public/Granted literature

US07718030B2 Method and system for controlling radical distribution Public/Granted day:2010-05-18

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）