发明申请
US20070073448A1 Semiconductor device having a hole or a step of normal mesa shape as viewed from any cross-section and manufacturing method of the same
审中-公开
具有从任何横截面观察的具有孔或台阶正常台面形状的半导体器件及其制造方法
- 专利标题： Semiconductor device having a hole or a step of normal mesa shape as viewed from any cross-section and manufacturing method of the same
- 专利标题（中）： 具有从任何横截面观察的具有孔或台阶正常台面形状的半导体器件及其制造方法
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申请号： US11583885申请日： 2006-10-20
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公开(公告)号： US20070073448A1公开(公告)日： 2007-03-29
- 发明人: Chisaki Takubo , Hiroji Yamada , Kazuhiro Mochizuki , Kenichi Tanaka , Tomonori Tanoue , Hiroyuki Uchiyama
- 申请人： Chisaki Takubo , Hiroji Yamada , Kazuhiro Mochizuki , Kenichi Tanaka , Tomonori Tanoue , Hiroyuki Uchiyama
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 优先权： JP2003-207831 20030819
- 主分类号： G05D1/10
- IPC分类号： G05D1/10
摘要：
A semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. A hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. A wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate is used.
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