发明申请
- 专利标题： High performance device design
- 专利标题（中）： 高性能设备设计
-
申请号： US11243959申请日： 2005-10-05
-
公开(公告)号： US20070075377A1公开(公告)日： 2007-04-05
- 发明人: Chien-Chao Huang , Fu-Liang Yang
- 申请人： Chien-Chao Huang , Fu-Liang Yang
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor structure having a recessed active region and a method for forming the same are provided. The semiconductor structure comprises a first and a second isolation structure having an active region therebetween. The first and second isolation structures have sidewalls with a tilt angle of substantially less than 90 degrees. The active region is recessed. By recessing the active region, the channel width is increased and device drive current is improved.
公开/授权文献
- US07582947B2 High performance device design 公开/授权日：2009-09-01
信息查询
IPC分类:
