Invention Application
US20070075385A1 Sidewall SONOS gate structure with dual-thickness oxide and method of fabricating the same
审中-公开
侧壁SONOS门结构与双层氧化物及其制造方法相同
- Patent Title: Sidewall SONOS gate structure with dual-thickness oxide and method of fabricating the same
- Patent Title (中): 侧壁SONOS门结构与双层氧化物及其制造方法相同
-
Application No.: US11243165Application Date: 2005-10-04
-
Publication No.: US20070075385A1Publication Date: 2007-04-05
- Inventor: Tzyh-Cheang Lee , Jiunn-Ren Hwang , Tsung-Lin Lee
- Applicant: Tzyh-Cheang Lee , Jiunn-Ren Hwang , Tsung-Lin Lee
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/76
Abstract:
A SONOS gate structure has an oxide structure on a substrate having gate pattern thereon. The oxide structure has a relatively thinner oxide portion on the substrate for keeping good program/erase efficiency, and a relatively thicker oxide portion on sidewalls of the gate pattern for inhibiting gate disturb. Trapping dielectric spacers are on formed the oxide structure laterally adjacent to said sidewalls of said gate pattern respectively.
Information query
IPC分类:
