发明申请
- 专利标题: Dual gate oxide one time programmable (OTP) antifuse cell
- 专利标题(中): 双栅氧化层一次可编程(OTP)反熔丝
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申请号: US11239903申请日: 2005-09-30
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公开(公告)号: US20070076463A1公开(公告)日: 2007-04-05
- 发明人: Ali Keshavarzi , Fabrice Paillet , Muhammad Khellah , Dinesh Somasekhar , Yibin Ye , Stephen Tang , Mohsen Alavi , Vivek De
- 申请人: Ali Keshavarzi , Fabrice Paillet , Muhammad Khellah , Dinesh Somasekhar , Yibin Ye , Stephen Tang , Mohsen Alavi , Vivek De
- 主分类号: G11C17/00
- IPC分类号: G11C17/00
摘要:
According to embodiments of the present invention, a one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. In on embodiment, access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.
公开/授权文献
- US07280425B2 Dual gate oxide one time programmable (OTP) antifuse cell 公开/授权日:2007-10-09