发明申请
US20070080345A1 Volatile negative differential resistance device using metal nanoparticles 有权
使用金属纳米粒子的易挥发负极差电阻器件

  • 专利标题: Volatile negative differential resistance device using metal nanoparticles
  • 专利标题(中): 使用金属纳米粒子的易挥发负极差电阻器件
  • 申请号: US11452838
    申请日: 2006-06-14
  • 公开(公告)号: US20070080345A1
    公开(公告)日: 2007-04-12
  • 发明人: Won JooKwang LeeSang LeeChulhee Kim
  • 申请人: Won JooKwang LeeSang LeeChulhee Kim
  • 优先权: KR2005-86779 20050916
  • 主分类号: H01L29/08
  • IPC分类号: H01L29/08
Volatile negative differential resistance device using metal nanoparticles
摘要:
Disclosed herein is a volatile negative differential resistance device using metal nanoparticles, the device includes an organic layer disposed between two metal electrodes, in which the organic layer includes uniformly dispersed metal nanoparticles having a diameter of about 10 nm or less in an organic material. The device of this invention exhibits a volatile negative differential resistance phenomenon at room temperature upon application of a voltage and is thus suitable for use in various switching devices and logic devices, with excellent reproducibility and simple inexpensive processing.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/06 ..按其形状区分的;按各半导体区域的形状、相对尺寸或配置区分的
H01L29/08 ...具有连接到1个通有待整流、放大或切换的电流的电极上去的半导体区域的;并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的
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