公开(公告)号：US20070080345A1

公开(公告)日：2007-04-12

申请号：US11452838

申请日：2006-06-14

申请人： Won Joo ,  Kwang Lee ,  Sang Lee ,  Chulhee Kim

发明人： Won Joo ,  Kwang Lee ,  Sang Lee ,  Chulhee Kim

IPC分类号： H01L29/08

CPC分类号： G11C13/0033 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2211/5614 ,  H01L27/2472 ,  H01L28/26 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608 ,  H01L47/00

摘要： Disclosed herein is a volatile negative differential resistance device using metal nanoparticles, the device includes an organic layer disposed between two metal electrodes, in which the organic layer includes uniformly dispersed metal nanoparticles having a diameter of about 10 nm or less in an organic material. The device of this invention exhibits a volatile negative differential resistance phenomenon at room temperature upon application of a voltage and is thus suitable for use in various switching devices and logic devices, with excellent reproducibility and simple inexpensive processing.

摘要翻译： 本文公开了使用金属纳米颗粒的挥发性负差动电阻器件，该器件包括设置在两个金属电极之间的有机层，其中有机层包括在有机材料中具有约10nm或更小直径的均匀分散的金属纳米颗粒。 本发明的装置在施加电压时在室温下表现出挥发性的负差分电阻现象，因此适用于各种开关装置和逻辑装置，具有优异的再现性和简单便宜的处理。

公开(公告)号：US08124238B2

公开(公告)日：2012-02-28

申请号：US11898979

申请日：2007-09-18

申请人： Won Jae Joo ,  Chulhee Kim ,  Kwang Hee Lee ,  Tae Lim Choi

发明人： Won Jae Joo ,  Chulhee Kim ,  Kwang Hee Lee ,  Tae Lim Choi

IPC分类号： B32B15/04 ,  B32B15/20 ,  B05D1/00 ,  B05D1/02 ,  B05D1/04 ,  B05D1/18

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  C07F17/02 ,  C08G83/003 ,  G11C13/0009 ,  G11C13/0016 ,  H01L51/0083 ,  H01L51/0095 ,  H01L51/0591 ,  Y10T428/31663 ,  Y10T428/31678 ,  Y10T428/31688 ,  Y10T428/31855

摘要： Disclosed herein is a dendrimer, in which metallocene, which is an oxidation-reduction material, is located at a core, and a conjugated dendron is connected to the metallocene core by a linker compound, an organic active layer having the dendrimer, an organic memory device having the organic active layer and a method of manufacturing the organic active layer and the organic memory device. The organic memory device manufactured using a dendrimer having a metallocene core of example embodiments may have a shorter switching time, decreased operation voltage, decreased manufacturing cost and increased reliability, thereby realizing a highly-integrated large-capacity memory device.

摘要翻译： 本文公开了一种树枝状大分子，其中作为氧化还原材料的茂金属位于核心，并且共轭树突通过连接体化合物连接到茂金属核，具有树枝状聚合物的有机活性层，有机记忆 具有有机活性层的器件和制造有机活性层的方法和有机存储器件。 使用具有示例性实施方案的茂金属核的树枝状聚合物制造的有机存储器件可以具有更短的开关时间，降低的操作电压，降低的制造成本和增加的可靠性，从而实现高度集成的大容量存储器件。

公开(公告)号：US08216686B2

公开(公告)日：2012-07-10

申请号：US12007308

申请日：2008-01-09

申请人： Won Jae Joo ,  Tae Lim Choi ,  Chulhee Kim ,  Kwang Hee Lee

发明人： Won Jae Joo ,  Tae Lim Choi ,  Chulhee Kim ,  Kwang Hee Lee

IPC分类号： B32B15/04 ,  B32B9/04 ,  H01L51/00

CPC分类号： H01L51/0059 ,  C07C211/54 ,  C07C2603/18 ,  C08G61/12 ,  C08G83/003 ,  C08G2261/316 ,  C08G2261/3422 ,  G11C13/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0038 ,  H01L51/0052 ,  H01L51/0095 ,  H01L51/0591 ,  H01L2251/308 ,  Y10T428/31678

摘要： A dendrimer according to example embodiments may include a triphenylamine core, wherein a conjugated dendron having no heteroatoms is coupled to the triphenylamine core. An organic memory device according to example embodiments may include an organic active layer between a first electrode and a second electrode, wherein the organic active layer includes the dendrimer according to example embodiments. A barrier layer may be provided between the first and second electrodes. A method of manufacturing the organic memory device according to example embodiments may include forming an organic active layer between a first electrode and a second electrode, the organic active layer including the dendrimer according to example embodiments.

摘要翻译： 根据示例性实施方案的树枝状大分子可以包括三苯胺核心，其中不含杂原子的共轭树突与三苯胺核心偶联。 根据示例性实施例的有机存储器件可以包括在第一电极和第二电极之间的有机活性层，其中根据示例性实施方案，有机活性层包括树枝状聚合物。 可以在第一和第二电极之间设置阻挡层。 根据示例性实施例的制造有机存储器件的方法可以包括在第一电极和第二电极之间形成有机活性层，所述有机活性层包括根据示例性实施方案的树枝状聚合物。

公开(公告)号：US20080248330A1

公开(公告)日：2008-10-09

申请号：US12007308

申请日：2008-01-09

申请人： Won Jae Joo ,  Tae Lim Choi ,  Chulhee Kim ,  Kwang Hee Lee

发明人： Won Jae Joo ,  Tae Lim Choi ,  Chulhee Kim ,  Kwang Hee Lee

IPC分类号： B32B9/04 ,  C07C211/54 ,  B05D5/12

CPC分类号： H01L51/0059 ,  C07C211/54 ,  C07C2603/18 ,  C08G61/12 ,  C08G83/003 ,  C08G2261/316 ,  C08G2261/3422 ,  G11C13/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0038 ,  H01L51/0052 ,  H01L51/0095 ,  H01L51/0591 ,  H01L2251/308 ,  Y10T428/31678

摘要： A dendrimer according to example embodiments may include a triphenylamine core, wherein a conjugated dendron having no heteroatoms is coupled to the triphenylamine core. An organic memory device according to example embodiments may include an organic active layer between a first electrode and a second electrode, wherein the organic active layer includes the dendrimer according to example embodiments. A barrier layer may be provided between the first and second electrodes. A method of manufacturing the organic memory device according to example embodiments may include forming an organic active layer between a first electrode and a second electrode, the organic active layer including the dendrimer according to example embodiments.

摘要翻译： 根据示例性实施方案的树枝状大分子可以包括三苯胺核心，其中不含杂原子的共轭树突与三苯胺核心偶联。 根据示例性实施例的有机存储器件可以包括在第一电极和第二电极之间的有机活性层，其中根据示例性实施方案，有机活性层包括树枝状聚合物。 可以在第一和第二电极之间设置阻挡层。 根据示例性实施例的制造有机存储器件的方法可以包括在第一电极和第二电极之间形成有机活性层，所述有机活性层包括根据示例性实施方案的树枝状聚合物。

公开(公告)号：US08546789B2

公开(公告)日：2013-10-01

申请号：US11452838

申请日：2006-06-14

申请人： Won Jae Joo ,  Kwang Hee Lee ,  Sang Kyun Lee ,  Chulhee Kim

发明人： Won Jae Joo ,  Kwang Hee Lee ,  Sang Kyun Lee ,  Chulhee Kim

IPC分类号： H01L29/08

CPC分类号： G11C13/0033 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2211/5614 ,  H01L27/2472 ,  H01L28/26 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608 ,  H01L47/00

摘要： Disclosed herein is a volatile negative differential resistance device using metal nanoparticles, the device includes an organic layer disposed between two metal electrodes, in which the organic layer includes uniformly dispersed metal nanoparticles having a diameter of about 10 nm or less in an organic material. The device of this invention exhibits a volatile negative differential resistance phenomenon at room temperature upon application of a voltage and is thus suitable for use in various switching devices and logic devices, with excellent reproducibility and simple inexpensive processing.

摘要翻译： 本文公开了使用金属纳米颗粒的挥发性负差动电阻器件，该器件包括设置在两个金属电极之间的有机层，其中有机层包括在有机材料中具有约10nm或更小直径的均匀分散的金属纳米颗粒。 本发明的装置在施加电压时在室温下表现出挥发性的负差分电阻现象，因此适用于各种开关装置和逻辑装置，具有优异的再现性和简单便宜的处理。

公开(公告)号：US20080241559A1

公开(公告)日：2008-10-02

申请号：US11898979

申请日：2007-09-18

申请人： Won Jae Joo ,  Chulhee Kim ,  Kwang Hee Lee ,  Tae Lim Choi

发明人： Won Jae Joo ,  Chulhee Kim ,  Kwang Hee Lee ,  Tae Lim Choi

IPC分类号： B32B15/08 ,  B05D1/02 ,  B05D1/04 ,  C08F30/04 ,  B32B27/28 ,  B05D1/40

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  C07F17/02 ,  C08G83/003 ,  G11C13/0009 ,  G11C13/0016 ,  H01L51/0083 ,  H01L51/0095 ,  H01L51/0591 ,  Y10T428/31663 ,  Y10T428/31678 ,  Y10T428/31688 ,  Y10T428/31855

摘要： Disclosed herein is a dendrimer, in which metallocene, which is an oxidation-reduction material, is located at a core, and a conjugated dendron is connected to the metallocene core by a linker compound, an organic active layer having the dendrimer, an organic memory device having the organic active layer and a method of manufacturing the organic active layer and the organic memory device. The organic memory device manufactured using a dendrimer having a metallocene core of example embodiments may have a shorter switching time, decreased operation voltage, decreased manufacturing cost and increased reliability, thereby realizing a highly-integrated large-capacity memory device.

摘要翻译： 本文公开了一种树枝状大分子，其中作为氧化还原材料的茂金属位于核心，并且共轭树突通过连接体化合物连接到茂金属核，具有树枝状聚合物的有机活性层，有机记忆 具有有机活性层的器件和制造有机活性层的方法和有机存储器件。 使用具有示例性实施方案的茂金属核的树枝状聚合物制造的有机存储器件可以具有更短的开关时间，降低的操作电压，降低的制造成本和增加的可靠性，从而实现高度集成的大容量存储器件。