Invention Application
- Patent Title: Optimized modules' proximity correction
- Patent Title (中): 优化模块的接近校正
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Application No.: US11192254Application Date: 2005-07-28
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Publication No.: US20070083846A1Publication Date: 2007-04-12
- Inventor: Harry Chuang , Cheng-Cheng Kuo
- Applicant: Harry Chuang , Cheng-Cheng Kuo
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A method comprising dissecting a photomask pattern layout into a plurality of segments, each segment having at least one evaluation point, applying a rule-based MPC to the photomask pattern layout and generating a rule-based MPC result, and applying a model-based MPC to the plurality of segments of the photomask pattern layout and generating an MPC correction that is influenced by the rule-based MPC result.
Information query
