A reduced area dynamic random access memory (DRAM) cell and method for fabricating the same wherein the cell occupies an area smaller than one photolithography pitch by two photolithography pitches through the formation of sidewall spacers along a first pattern to define a first portion of the active region of the memory cell and a second orthogonally oriented pattern to define a second portion of the active region of the memory cell thereby creating a ladder shaped active region for a column of the memory cells.