利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20070090493A1 Fabrication of nitrogen containing regions on silicon containing regions in integrated circuits, and integrated circuits obtained thereby 审中-公开
在集成电路中含硅区域上的含氮区域的制造以及由此获得的集成电路

Fabrication of nitrogen containing regions on silicon containing regions in integrated circuits, and integrated circuits obtained thereby
摘要：
Silicon oxide (210) is grown on a silicon region (130). At least a portion (210N) of the silicon oxide (210) adjacent to the silicon region (130) is nitrided. Then some of the silicon oxide (210) is removed, leaving the nitrided portion (210N). Additional silicon oxide is thermally grown on the silicon region (130) under the nitrided silicon oxide portion (210N). This additional silicon oxide and the nitrided portion (210N) form a silicon oxide layer (140) having a high nitrogen concentration adjacent to a surface opposite from the silicon region (130) and a low nitrogen concentration elsewhere. Another nitridation step increases the nitrogen concentration in the silicon oxide layer (140) adjacent to the silicon region, providing a double peak nitrogen profile.
摘要（中）：

氧化硅（210）在硅区（130）上生长。 与硅区域（130）相邻的氧化硅（210）的至少一部分（210 N）被氮化。 然后去除一些氧化硅（210），留下氮化部分（210N）。 另外的氧化硅在氮化硅氧化物部分（210N）下在硅区域（130）上热生长。 该另外的氧化硅和氮化部分（210 N）形成具有与氮区域相反的表面附近的高氮浓度的氧化硅层（140），而在其他地方具有低的氮浓度。 另一个氮化步骤增加邻近硅区域的氧化硅层（140）中的氮浓度，提供双峰氮分布。

信息查询
Global Dossier
Espacenet
0/0