发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11511337申请日: 2006-08-29
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公开(公告)号: US20070096142A1公开(公告)日: 2007-05-03
- 发明人: Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
- 申请人: Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2005-247838 20050829
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L29/24
摘要:
A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.
公开/授权文献
- US07397069B2 Semiconductor device 公开/授权日:2008-07-08