Invention Application
- Patent Title: Semiconductor laser device that has the effect of phonon-assisted light amplification and method for manufacturing the same
- Patent Title (中): 具有声子辅助光放大效果的半导体激光器件及其制造方法
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Application No.: US11261484Application Date: 2005-10-31
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Publication No.: US20070096171A1Publication Date: 2007-05-03
- Inventor: Ching-Fuh Lin , Chu-Ting Huang , Shu-Chia Hsu , Kung-An Lin , Eih-Zhe Liang
- Applicant: Ching-Fuh Lin , Chu-Ting Huang , Shu-Chia Hsu , Kung-An Lin , Eih-Zhe Liang
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01L29/76 ; H01L21/8234
Abstract:
A semiconductor laser device that has the effect of phonon-assisted light amplification and a method for manufacturing the same are proposed. A conductive layer is formed on a semiconductor silicon substrate. A current flow is used to accomplish electro-luminescence of silicon. A silicon dioxide nanometer particle layer is sandwiched between the conductive layer and the semiconductor silicon substrate to form a MOS junction for carrier confinement. The phonon-assisted light emission mechanism can thus be strengthened to enhance the electro-luminescence efficiency of silicon so as to accomplish the lasing effect.
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