公开(公告)号：US20140035125A1

公开(公告)日：2014-02-06

申请号：US13562551

申请日：2012-07-31

Applicant: Chih-Ming Kuo ,  Lung-Hua Ho ,  Kung-An Lin ,  Sheng-Hiu Chen

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Kung-An Lin ,  Sheng-Hiu Chen

IPC: H01L21/60 ,  H01L23/498

CPC classification number: H01L21/76885 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/16058 ,  H01L2224/81193 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier having a metallic layer, wherein the metallic layer comprises a plurality of base areas and a plurality of outer lateral areas; forming a first photoresist layer; forming a plurality of bearing portions; removing the first photoresist layer to reveal the bearing portions, each bearing portion comprises a bearing surface having a first area and a second area; forming a second photoresist layer for revealing the first areas of the bearing surfaces; forming a plurality of connection portions, wherein the first areas of the bearing surfaces are covered by the connection portions to make each connection portion connect with each bearing portion to form a snap bump; removing the outer lateral areas of the metallic layer to make the base areas form a plurality of under bump metallurgy layers.

公开(公告)号：US20130334681A1

公开(公告)日：2013-12-19

申请号：US13525460

申请日：2012-06-18

Applicant: Chin-Tang Hsieh ,  Chih-Ming Kuo ,  Chia-Jung Tu ,  Shih-Chieh Chang ,  Chih-Hsien Ni ,  Lung-Hua Ho ,  Chaun-Yu Wu ,  Kung-An Lin

Inventor： Chin-Tang Hsieh ,  Chih-Ming Kuo ,  Chia-Jung Tu ,  Shih-Chieh Chang ,  Chih-Hsien Ni ,  Lung-Hua Ho ,  Chaun-Yu Wu ,  Kung-An Lin

IPC: H01L23/488 ,  H01L21/56

CPC classification number: H01L23/49811 ,  H01L21/4846 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11831 ,  H01L2224/11903 ,  H01L2224/11906 ,  H01L2224/13011 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16058 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/81345 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A semiconductor package structure includes a first substrate, a second substrate and an encapsulant. The first substrate comprises a plurality of first bumps and a plurality of first solder layers. Each of the first solder layers is formed on each of the first bumps and comprises a cone-shaped slot having an inner surface. The second substrate comprises a plurality of second bumps and a plurality of second solder layers. Each of the second solder layers is formed on each of the second bumps and comprises an outer surface. Each of the second solder layers is a cone-shaped body. The second solder layer couples to the first solder layer and is accommodated within the first solder layer. The inner surface of the cone-shaped slot contacts with the outer surface of the second solder layer. The encapsulant is formed between the first substrate and the second substrate.

Abstract translation: 半导体封装结构包括第一衬底，第二衬底和密封剂。 第一基板包括多个第一凸块和多个第一焊料层。 每个第一焊料层形成在每个第一凸块上，并且包括具有内表面的锥形槽。 第二基板包括多个第二凸块和多个第二焊料层。 每个第二焊料层形成在每个第二凸块上并且包括外表面。 每个第二焊料层是锥形体。 第二焊料层耦合到第一焊料层并且容纳在第一焊料层内。 锥形槽的内表面与第二焊料层的外表面接触。 密封剂形成在第一基板和第二基板之间。

公开(公告)号：US08658466B2

公开(公告)日：2014-02-25

申请号：US13525460

申请日：2012-06-18

Applicant: Chin-Tang Hsieh ,  Chih-Ming Kuo ,  Chia-Jung Tu ,  Shih-Chieh Chang ,  Chih-Hsien Ni ,  Lung-Hua Ho ,  Chaun-Yu Wu ,  Kung-An Lin

Inventor： Chin-Tang Hsieh ,  Chih-Ming Kuo ,  Chia-Jung Tu ,  Shih-Chieh Chang ,  Chih-Hsien Ni ,  Lung-Hua Ho ,  Chaun-Yu Wu ,  Kung-An Lin

IPC: H01L21/00

CPC classification number: H01L23/49811 ,  H01L21/4846 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11831 ,  H01L2224/11903 ,  H01L2224/11906 ,  H01L2224/13011 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16058 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/81345 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A semiconductor package structure includes a first substrate, a second substrate and an encapsulant. The first substrate comprises a plurality of first bumps and a plurality of first solder layers. Each of the first solder layers is formed on each of the first bumps and comprises a cone-shaped slot having an inner surface. The second substrate comprises a plurality of second bumps and a plurality of second solder layers. Each of the second solder layers is formed on each of the second bumps and comprises an outer surface. Each of the second solder layers is a cone-shaped body. The second solder layer couples to the first solder layer and is accommodated within the first solder layer. The inner surface of the cone-shaped slot contacts with the outer surface of the second solder layer. The encapsulant is formed between the first substrate and the second substrate.

Abstract translation: 半导体封装结构包括第一衬底，第二衬底和密封剂。 第一基板包括多个第一凸块和多个第一焊料层。 每个第一焊料层形成在每个第一凸块上，并且包括具有内表面的锥形槽。 第二基板包括多个第二凸块和多个第二焊料层。 每个第二焊料层形成在每个第二凸块上并且包括外表面。 每个第二焊料层是锥形体。 第二焊料层耦合到第一焊料层并且容纳在第一焊料层内。 锥形槽的内表面与第二焊料层的外表面接触。 密封剂形成在第一基板和第二基板之间。

公开(公告)号：US20140035126A1

公开(公告)日：2014-02-06

申请号：US13562558

申请日：2012-07-31

Applicant: Chih-Ming Kuo ,  Lung-Hua Ho ,  Kung-An Lin ,  Sheng-Hiu Chen

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Kung-An Lin ,  Sheng-Hiu Chen

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L24/14 ,  H01L21/4853 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a substrate having a metallic layer that includes a first metal layer and a second metal layer, the first metal layer comprises plural base areas and plural first outer lateral areas, the second metal layer comprises plural second base areas and plural second outer lateral areas; forming a first photoresist layer; forming plural bearing portions; removing the first photoresist layer; forming a second photoresist layer; forming plural connection portions, each connection portion comprises a first connection layer and a second connection layer; removing the second photoresist layer to reveal the connection portions and the bearing portions; removing the first outer lateral areas; reflowing the second connection layers to form plural composite bumps; removing the second outer lateral areas to make the first base areas and the second base areas form plural under bump metallurgy layers.

公开(公告)号：US20070096171A1

公开(公告)日：2007-05-03

申请号：US11261484

申请日：2005-10-31

Applicant: Ching-Fuh Lin ,  Chu-Ting Huang ,  Shu-Chia Hsu ,  Kung-An Lin ,  Eih-Zhe Liang

Inventor： Ching-Fuh Lin ,  Chu-Ting Huang ,  Shu-Chia Hsu ,  Kung-An Lin ,  Eih-Zhe Liang

IPC: H01S5/00 ,  H01L29/76 ,  H01L21/8234

CPC classification number: H01S5/30 ,  H01S5/3009 ,  H01S5/3031

Abstract: A semiconductor laser device that has the effect of phonon-assisted light amplification and a method for manufacturing the same are proposed. A conductive layer is formed on a semiconductor silicon substrate. A current flow is used to accomplish electro-luminescence of silicon. A silicon dioxide nanometer particle layer is sandwiched between the conductive layer and the semiconductor silicon substrate to form a MOS junction for carrier confinement. The phonon-assisted light emission mechanism can thus be strengthened to enhance the electro-luminescence efficiency of silicon so as to accomplish the lasing effect.

Abstract translation: 提出了具有声子辅助光放大效果的半导体激光器件及其制造方法。 导电层形成在半导体硅衬底上。 电流用于实现硅的电致发光。 二氧化硅纳米颗粒层夹在导电层和半导体硅衬底之间以形成用于载流子限制的MOS结。 因此可以加强声子辅助发光机制，以提高硅的电致发光效率，从而实现激光效应。