发明申请
US20070096198A1 Non-volatile memory cells and method for fabricating non-volatile memory cells
审中-公开
非易失性存储单元和用于制造非易失性存储单元的方法
- 专利标题： Non-volatile memory cells and method for fabricating non-volatile memory cells
- 专利标题（中）： 非易失性存储单元和用于制造非易失性存储单元的方法
-
申请号： US11262309申请日： 2005-10-28
-
公开(公告)号： US20070096198A1公开(公告)日： 2007-05-03
- 发明人: Franz Hofmann , Johannes Luyken , Michael Specht , Wolfgang Rosner
- 申请人： Franz Hofmann , Johannes Luyken , Michael Specht , Wolfgang Rosner
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
The invention relates to non-volatile memory cells. Further, the invention relates to a method for fabricating non-volatile memory cells. Memory cells are formed on a semiconductor wafer having a protruding element with a top surface. A transistor is formed having a first part, a second part, and a third part. The first part includes a first junction region and a first charge trapping layer on the top surface. The second part includes a second junction region and charge trapping layer on the top surface. The third part has a gate electrode and a gate dielectric layer at least partially on sidewalls of the protruding element. The gate electrode contacts the first and second charge trapping layers.
信息查询
IPC分类:
