发明申请
- 专利标题： Method for fabricating and BEOL interconnect structures with simultaneous formation of high-k and low-k dielectric regions
- 专利标题（中）： 同时形成高k和低k电介质区域的制造方法和BEOL互连结构
-
申请号： US11266741申请日： 2005-11-03
-
公开(公告)号： US20070096319A1公开(公告)日： 2007-05-03
- 发明人: Louis Hsu , Jack Mandelman , William Tonti , Chih-Chao Yang
- 申请人： Louis Hsu , Jack Mandelman , William Tonti , Chih-Chao Yang
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A method for fabricating and back-end-of-line (BEOL) metalization structures includes simultaneous high-k and low-k dielectric regions. An interconnect structure includes a first inter-level dielectric (ILD) layer and a second ILD layer with the first ILD layer underlying the second ILD layer. A plurality of columnar air gaps is formed in the first ILD. The columnar air gap structure is created using a two-phase photoresist material for providing different etching selectivity during subsequent processing.