发明申请
US20070099415A1 INTEGRATION PROCESS OF TUNGSTEN ATOMIC LAYER DEPOSITION FOR METALLIZATION APPLICATION
审中-公开
用于金属化应用的金属原子层沉积的集成过程
- 专利标题： INTEGRATION PROCESS OF TUNGSTEN ATOMIC LAYER DEPOSITION FOR METALLIZATION APPLICATION
- 专利标题（中）： 用于金属化应用的金属原子层沉积的集成过程
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申请号： US11549941申请日： 2006-10-16
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公开(公告)号： US20070099415A1公开(公告)日： 2007-05-03
- 发明人: Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
- 申请人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.
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