公开(公告)号：US20130263944A1

公开(公告)日：2013-10-10

申请号：US13827510

申请日：2013-03-14

Applicant: Faruk Gungor ,  Dien-Yeh Wu ,  Joseph Yudovsky ,  Mei Chang

Inventor： Faruk Gungor ,  Dien-Yeh Wu ,  Joseph Yudovsky ,  Mei Chang

IPC: F17D3/00

CPC classification number: F17D3/00 ,  F17C1/00 ,  F17C2270/0518 ,  Y10T137/7833 ,  Y10T137/8593 ,  Y10T137/87249

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

公开(公告)号：US07524374B2

公开(公告)日：2009-04-28

申请号：US10590448

申请日：2004-05-27

Applicant: Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

Inventor： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC: C30B21/02

CPC classification number: H01L21/76843 ,  C23C16/34 ,  C23C16/4481 ,  H01L21/28562 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.

Abstract translation: 本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。 该装置包括具有侧壁（402），顶部和底部的罐（300）。 罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。 在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。 加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。 还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

公开(公告)号：US20080268171A1

公开(公告)日：2008-10-30

申请号：US11873129

申请日：2007-10-16

Applicant: PAUL MA ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

Inventor： PAUL MA ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

IPC: C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.

Abstract translation: 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，提供了用于接收等离子体增强气相沉积室内的处理气体的等离子体挡板组件，其包括含有上表面以接收处理气体的等离子体挡板和用于发射处理气体的下表面，多个 的开口，其被配置为使处理气体从上表面上方流动到下表面下方，其中每个开口定位在垂直于下表面的垂直轴线的预定角度以及在上表面上的锥形鼻锥。 在一个示例中，开口是以预定角度定位的槽，以以圆形流动图案发射处理气体。

公开(公告)号：US20080149031A1

公开(公告)日：2008-06-26

申请号：US11960212

申请日：2007-12-19

Applicant: SCHUBERT S. CHU ,  Christophe Marcadal ,  Seshadri Ganguli ,  Norman M. Nakashima ,  Dien-Yeh Wu

Inventor： SCHUBERT S. CHU ,  Christophe Marcadal ,  Seshadri Ganguli ,  Norman M. Nakashima ,  Dien-Yeh Wu

IPC: C23C16/00

CPC classification number: C23C16/4482 ,  C23C16/4481

Abstract: Embodiments of the invention provide an apparatus and a process for generating a chemical precursor used in a vapor deposition processing system. The apparatus includes a canister (e.g., ampoule) having a sidewall, a top, and a bottom encompassing an interior volume therein, inlet and outlet ports in fluid communication with the interior volume, and a thermally conductive coating disposed on or over the outside surface of the canister. The thermally conductive coating is more thermally conductive than the outside surface of the canister. The thermally conductive coating may contain aluminum, aluminum nitride, copper, brass, silver, titanium, silicon nitride, or alloys thereof. In some embodiments, an adhesion layer (e.g., titanium or tantalum) may be disposed between the outside surface of the canister and the thermally conductive coating. In other embodiments, the canister may contain a plurality of baffles or solid heat-transfer particles to help evenly heat a solid precursor therein.

Abstract translation: 本发明的实施方案提供了用于产生在气相沉积处理系统中使用的化学前体的装置和方法。 该装置包括具有侧壁，顶部和底部的罐（例如，安瓿），其内部容纳有内部容积，与内部空间流体连通的入口和出口以及设置在外表面上或上方的导热涂层 的罐子。 导热涂层比罐的外表面更加导热。 导热涂层可以含有铝，氮化铝，铜，黄铜，银，钛，氮化硅或其合金。 在一些实施例中，粘合层（例如，钛或钽）可以设置在罐的外表面和导热涂层之间。 在其它实施例中，罐可以包含多个挡板或固体传热颗粒以帮助均匀地加热其中的固体前体。

公开(公告)号：US20080041313A1

公开(公告)日：2008-02-21

申请号：US11925667

申请日：2007-10-26

Applicant: LING CHEN ,  VINCENT KU ,  DIEN-YEH WU ,  HUA CHUNG ,  ALAN OUYE ,  NORMAN NAKASHIMA ,  MEI CHANG

Inventor： LING CHEN ,  VINCENT KU ,  DIEN-YEH WU ,  HUA CHUNG ,  ALAN OUYE ,  NORMAN NAKASHIMA ,  MEI CHANG

IPC: C23C16/00

CPC classification number: C23C16/34 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  Y10T137/0396

Abstract: Embodiments as described here provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is an ampoule assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.

Abstract translation: 这里描述的实施例提供了一种用于执行原子层沉积工艺的装置和方法。 在一个实施例中，沉积室组件包括具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室的周边部分的底表面 盖，底表面成形并定尺寸为基本上覆盖基板接收表面。 该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。 在一个示例中，气源是安瓿组件，其通过至少一个断开配件附接到沉积室，并且包含远离气体出口的入口管。

公开(公告)号：US20070235059A1

公开(公告)日：2007-10-11

申请号：US11400663

申请日：2006-04-07

Applicant: Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

Inventor： Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

IPC: B08B6/00 ,  C25F1/00

CPC classification number: B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  Y02C20/30 ,  Y10S438/905

Abstract: A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.

Abstract translation: 通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在 处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。 等离子体的阻抗与钌浓度结合的测量提供了室清洁度的精确指示。

公开(公告)号：US20070151514A1

公开(公告)日：2007-07-05

申请号：US11680995

申请日：2007-03-01

Applicant: LING CHEN ,  Vincent Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

Inventor： LING CHEN ,  Vincent Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

IPC: C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54

Abstract: In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body, and delivery sub-assemblies coupled to the lid assembly and configured to deliver process gases into a centralized expanding conduit, which extends through the lid assembly and expands radially outward. The first gas delivery sub-assembly contains an annular mixing channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular mixing channel is adapted to deliver a first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. A first gas inlet may be coupled to the annular mixing channel and positioned to provide the first process gas to the annular mixing channel. The second gas delivery sub-assembly contains a second gas inlet in fluid communication to the centralized expanding conduit.

Abstract translation: 在一个实施例中，提供了一种用于执行原子层沉积工艺的装置，其包括具有基板支撑件的室主体，附接到室主体的盖组件和联接到盖组件的输送子组件，并且构造成输送工艺气体 进入集中扩展的管道，其延伸穿过盖组件并径向向外扩张。 第一气体输送子组件包含环形混合通道，环形混合通道环绕并与中央膨胀导管流体连通，其中环形混合通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。 第一气体入口可以联接到环形混合通道并且定位成将第一工艺气体提供给环形混合通道。 第二气体输送子组件包含与集中扩张导管流体连通的第二气体入口。

公开(公告)号：US20070099415A1

公开(公告)日：2007-05-03

申请号：US11549941

申请日：2006-10-16

Applicant: Ling Chen ,  Hua Chung ,  Sean Seutter ,  Michael Yang ,  Ming Xi ,  Vincent Ku ,  Dien-Yeh Wu ,  Alan Ouye ,  Norman Nakashima ,  Barry Chin ,  Hong Zhang

Inventor： Ling Chen ,  Hua Chung ,  Sean Seutter ,  Michael Yang ,  Ming Xi ,  Vincent Ku ,  Dien-Yeh Wu ,  Alan Ouye ,  Norman Nakashima ,  Barry Chin ,  Hong Zhang

IPC: H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.

Abstract translation: 在一个实施例中，提供了一种在衬底上形成含钨材料的方法，其包括将具有下层钨层的衬底定位在处理室内，并且在循环层沉积期间将下述钨层上沉积含钨阻挡层 处理。 含钨阻挡层含有难熔金属氮化物材料。 该方法进一步提供在气相沉积工艺期间在含钨阻挡层上沉积种子层，并且在化学气相沉积工艺期间在种子层上沉积体钨层。

公开(公告)号：US20060257295A1

公开(公告)日：2006-11-16

申请号：US11383642

申请日：2006-05-16

Applicant: Ling Chen ,  Vincent Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

Inventor： Ling Chen ,  Vincent Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC: B01J8/18

CPC classification number: C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.

Abstract translation: 提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。 罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。 在一个实施例中，挡板包含在位于罐底部的预制插入件上。 在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。 入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

公开(公告)号：US07066194B2

公开(公告)日：2006-06-27

申请号：US10199482

申请日：2002-07-19

Applicant: Vincent W. Ku ,  Ling Chen ,  Dien-Yeh Wu

Inventor： Vincent W. Ku ,  Ling Chen ,  Dien-Yeh Wu

IPC: F16K49/00

CPC classification number: F16K7/16 ,  F16K27/0236 ,  F16K27/029 ,  Y10T137/4259 ,  Y10T137/6606 ,  Y10T137/86389 ,  Y10T137/8766 ,  Y10T137/87684

Abstract: Embodiments of the present invention relate to a method and apparatus for rapid delivery of pulses of one or more reactants to a substrate processing chamber. One embodiment of a valve body includes a first inlet, a second inlet, and an outlet. A valve chamber is in fluid communication with the first inlet, the second inlet, and the outlet. A valve seat is formed at least around the first inlet. The valve chamber further includes an annular groove formed around the valve seat coupling the second inlet and the outlet. One embodiment of a pneumatic valve assembly includes a valve body having at least two ports. A valve seat surrounds one of the ports. The pneumatic valve assembly further includes a diaphragm assembly having a diaphragm movable to open and close the one port. A piston housed in a cylinder is coupled to the diaphragm to actuate the diaphragm. An actuation chamber is formed between the cylinder and the piston. In certain embodiments, the internal volume of the actuation chamber is about 3.0 cm3 or less.

Abstract translation: 本发明的实施例涉及一种用于将一种或多种反应物的脉冲快速传送到基底处理室的方法和装置。 阀体的一个实施例包括第一入口，第二入口和出口。 阀室与第一入口，第二入口和出口流体连通。 至少在第一入口周围形成阀座。 阀室还包括围绕阀座形成的环形槽，该阀座联接第二入口和出口。 气动阀组件的一个实施例包括具有至少两个端口的阀体。 阀座围绕其中一个端口。 气动阀组件还包括具有可移动以打开和关闭一个端口的隔膜的隔膜组件。 容纳在气缸中的活塞联接到隔膜以致动隔膜。 在气缸和活塞之间形成致动室。 在某些实施例中，致动室的内部容积为约3.0cm 3或更小。