发明申请
US20070099417A1 Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop
审中-公开
粘附和最小化无电解CO合金膜上的氧化,用于与低K金属间电介质和蚀刻停止集成
- 专利标题: Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop
- 专利标题(中): 粘附和最小化无电解CO合金膜上的氧化,用于与低K金属间电介质和蚀刻停止集成
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申请号: US11329785申请日: 2006-01-10
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公开(公告)号: US20070099417A1公开(公告)日: 2007-05-03
- 发明人: Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
- 申请人: Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.