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33 条记录 (耗时 0.021 秒)

    Multiple precursor cyclical deposition system
    1.
    发明授权
    Multiple precursor cyclical deposition system 失效
    多前体循环沉积系统

    公开(公告)号：US07396565B2

    公开(公告)日：2008-07-08

    申请号：US10913888

    申请日：2004-08-06

    申请人： Michael Xi Yang ,  Hyungsuk Alexander Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

    发明人： Michael Xi Yang ,  Hyungsuk Alexander Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

    IPC分类号： C23C16/40

    CPC分类号： C23C16/45544 ,  C23C16/45531 ,  C23C16/45561

    摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.

    摘要翻译： 本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。 在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。 一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。 在一个方面，三元材料层包括但不限于钨硼硅（W x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x <<） （TaSi x N y），氮化硅（TaSi x N y N y），氮氧化硅（SiO 2） N x Y）和氧化铪氧化铪（HfSi x O y y）。 在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

    Electroless cobalt alloy deposition process
    5.
    发明申请
    Electroless cobalt alloy deposition process 审中-公开
    无电钴合金沉积工艺

    公开(公告)号：US20050161338A1

    公开(公告)日：2005-07-28

    申请号：US10970839

    申请日：2004-10-21

    申请人： Hongbin Fang ,  Ramin Emami ,  Timothy Weidman ,  Arulkumar Shanmugasundram

    发明人： Hongbin Fang ,  Ramin Emami ,  Timothy Weidman ,  Arulkumar Shanmugasundram

    IPC分类号： C23C18/18 ,  C23C18/34 ,  C23C18/50 ,  C25D5/10 ,  H01L21/288 ,  H01L21/768

    CPC分类号： H01L21/288 ,  C23C18/1844 ,  C23C18/34 ,  C23C18/50 ,  H01L21/76849 ,  H01L21/76874

    摘要： In one embodiment, a method for depositing a cobalt-containing capping layer on a metal layer is provided which includes rinsing the metal layer with a deionized water wetting step, depositing a palladium layer on the metal layer by exposing the metal layer to an electroless activation solution comprising a palladium precursor and an acid, and depositing the cobalt-containing capping layer on the palladium layer by exposing the palladium layer to an electroless cobalt-containing solution comprising a cobalt source, a tungsten source, an oxygen scavenger and a surfactant. Ascorbic acid may be used as the oxygen scavenger. In another embodiment, a composition of an electroless plating solution is provided which includes a cobalt source at a concentration in a range from about 50 mM to about 250 mM, a tungsten source at a concentration in a range from about 10 mM to about 100 mM, a complexing agent at a concentration in a range from about 10 mM to about 200 mM, at least one reductant at a concentration in a range from about 1 mM to about 100 mM, a surfactant at a concentration in a range from about 1 mg/L to about 100 mg/L, and ascorbic acid at a concentration in a range from about 30 mg/L to about 300 mg/L.

    摘要翻译： 在一个实施例中，提供了一种用于在金属层上沉积含钴覆盖层的方法，其包括用去离子水润湿步骤冲洗金属层，通过将金属层暴露于无电激活 包含钯前体和酸的溶液，并通过将钯层暴露于包含钴源，钨源，除氧剂和表面活性剂的无电镀钴溶液中，将钯覆盖层沉积在钯层上。 可以使用抗坏血酸作为除氧剂。 在另一个实施方案中，提供了化学镀溶液的组合物，其包含浓度在约50mM至约250mM范围内的钴源，浓度范围为约10mM至约100mM的钨源 浓度范围为约10mM至约200mM的络合剂，至少一种浓度为约1mM至约100mM的还原剂，浓度为约1mg的表面活性剂 L至约100mg / L，抗坏血酸浓度为约30mg / L至约300mg / L。

    Multiple precursor cyclical depositon system
    6.
    发明申请
    Multiple precursor cyclical depositon system 失效
    多个前体循环保存系统

    公开(公告)号：US20050008779A1

    公开(公告)日：2005-01-13

    申请号：US10913888

    申请日：2004-08-06

    申请人： Michael Yang ,  Hyungsuk Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

    发明人： Michael Yang ,  Hyungsuk Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/45531 ,  C23C16/45561

    摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.

    摘要翻译： 本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。 在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。 一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。 在一个方面，三元材料层包括但不限于钨硼硅（WBxSiy），氮化硅钛（TiSixNy），氮化钽（TaSixNy），氧氮化硅（SiOxNy）和氧化铪铪（HfSixOy） 。 在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

    Raman spectroscopy as integrated chemical metrology
    10.
    发明授权
    Raman spectroscopy as integrated chemical metrology 失效
    拉曼光谱作为综合化学计量学

    公开(公告)号：US07542132B2

    公开(公告)日：2009-06-02

    申请号：US11830202

    申请日：2007-07-30

    申请人： Hongbin Fang ,  Josh Golden ,  Timothy W. Weidman ,  Yaxin Wang ,  Arulkumar Shanmugasundram

    发明人： Hongbin Fang ,  Josh Golden ,  Timothy W. Weidman ,  Yaxin Wang ,  Arulkumar Shanmugasundram

    IPC分类号： G01J3/44 ,  G01N21/65

    CPC分类号： G01N21/65

    摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.

    摘要翻译： 公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。 拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。 通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。 此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。 基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。