发明申请
US20070102290A1 Novel material development apparatus and novel material development method using arc plasma
审中-公开
使用电弧等离子体的新型材料开发设备和新型材料开发方法
- 专利标题: Novel material development apparatus and novel material development method using arc plasma
- 专利标题(中): 使用电弧等离子体的新型材料开发设备和新型材料开发方法
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申请号: US11270535申请日: 2005-11-10
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公开(公告)号: US20070102290A1公开(公告)日: 2007-05-10
- 发明人: Seiichi Hata , Akira Shimokohbe
- 申请人: Seiichi Hata , Akira Shimokohbe
- 专利权人: THE CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING
- 当前专利权人: THE CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; C23C14/00 ; C23C16/00
摘要:
This invention provides a novel material development apparatus capable of automatically and efficiently forming uniform novel materials with reduced impurities and different compositions individually on respective cells. The novel material development apparatus includes: a plurality of arc plasma guns; a magnetic circuit deflecting/focusing plasma of the arc plasma guns; a controller thereof; and a plurality of deposition cells. For film deposition, plasma containing ions of constituent elements and generated in a pulsed manner by the arc plasma guns are focused to the deposition cell by the magnetic circuit. We can switch the deposition cells by using the moving stage or by using the magnetic circuit changing a focus point, or we can change a focus point by using magnetic circuit so that collectively form uniform novel materials with reduced impurities and different compositions of alloys or compounds efficiently.
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