发明申请
- 专利标题: Capacitor and method for fabricating the same
- 专利标题(中): 电容器及其制造方法
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申请号: US11595548申请日: 2006-11-10
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公开(公告)号: US20070102742A1公开(公告)日: 2007-05-10
- 发明人: Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
- 申请人: Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 优先权: KR2005-0107399 20051110
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.
公开/授权文献
- US07616426B2 Capacitor and method for fabricating the same 公开/授权日:2009-11-10