公开(公告)号：US07670903B2

公开(公告)日：2010-03-02

申请号：US11646481

申请日：2006-12-28

申请人： Ki-Seon Park ,  Jae-Sung Roh ,  Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Jin-Hyock Kim ,  Kee-Jeung Lee

发明人： Ki-Seon Park ,  Jae-Sung Roh ,  Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Jin-Hyock Kim ,  Kee-Jeung Lee

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method for fabricating a cylindrical capacitor. The method includes forming an isolation structure including an interlayer on a substrate, the substrate having a plurality of contact plugs formed therein, forming a plurality of opening regions by etching the isolation structure, thereby exposing selected portions of the contact plugs, forming storage nodes on a surface of the opening regions, etching selected portions of the isolation structure to form a patterned interlayer that encompasses selected portions of the storage nodes, thereby supporting the storage nodes, removing remaining portions of the isolation structure, and removing the patterned interlayer to expose inner and outer walls of the storage nodes.

摘要翻译： 一种制造圆柱形电容器的方法。 所述方法包括在基板上形成包括中间层的隔离结构，所述基板具有形成在其中的多个接触塞，通过蚀刻隔离结构形成多个开口区域，从而暴露接触塞的选定部分，形成储存节点 蚀刻开口区域的表面，蚀刻隔离结构的选定部分以形成包围存储节点的选定部分的图案化中间层，从而支撑存储节点，去除隔离结构的剩余部分，以及去除图案化中间层以暴露内部 和存储节点的外壁。

公开(公告)号：US20070232081A1

公开(公告)日：2007-10-04

申请号：US11476789

申请日：2006-06-29

申请人： Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Jae-Sung Roh ,  Jin-Hyock Kim

发明人： Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Jae-Sung Roh ,  Jin-Hyock Kim

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02189 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31641 ,  H01L28/40 ,  Y02T50/67

摘要： A method for forming a zirconium oxide (ZrO2) layer on a substrate in a chamber includes controlling a temperature of the substrate; and repeating a unit cycle of an atomic layer deposition (ALD) method. The unit cycle includes supplying a zirconium (Zr) source into a chamber, parts of the Zr source being adsorbed into a surface of the substrate; purging non-adsorbed parts of the Zr source remaining inside the chamber; supplying a reaction gas for reacting with the adsorbed parts of the Zr source; and purging non-reacted parts of the reaction gas remaining inside the chamber and reaction byproducts, wherein the temperature of the substrate and a concentration of the reaction gas are controlled such that the ZrO2 layer is formed with a tetragonal structure.

摘要翻译： 在室中的基板上形成氧化锆（ZrO 2/2）层的方法包括控制基板的温度; 并重复原子层沉积（ALD）方法的单位周期。 单元循环包括将锆（Zr）源供应到室中，部分Zr源被吸附到衬底的表面中; 吹扫保留在室内的Zr源的未吸附部分; 供给与Zr源的吸附部反应的反应气体， 并清洗残留在室内的反应气体的未反应部分和反应副产物，其中控制基板的温度和反应气体的浓度，使得ZrO 2层形成为 四方结构。

公开(公告)号：US20070099375A1

公开(公告)日：2007-05-03

申请号：US11452407

申请日：2006-06-14

申请人： Jin-Hyock Kim ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Han-Sang Song ,  Deok-Sin Kil ,  Jae-Sung Roh

发明人： Jin-Hyock Kim ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Han-Sang Song ,  Deok-Sin Kil ,  Jae-Sung Roh

IPC分类号： H01L21/8244 ,  H01L21/4763 ,  H01L21/8234

CPC分类号： H01L27/10844 ,  H01L21/8239 ,  H01L27/10808 ,  H01L27/10835 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/91

摘要： A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.

摘要翻译： 一种制造电容器的方法包括：在衬底上形成存储节点接触插塞; 形成绝缘层，其具有使存储节点接触插塞的表面暴露在存储接触插塞上的开口; 通过在不同温度下执行的两个步骤，在绝缘层和存储节点接触插塞的暴露表面上形成用于存储节点的导电层; 执行隔离工艺以隔离导电层的部分; 并在隔离的导电层上依次形成电介质层和平板电极。

公开(公告)号：US07772132B2

公开(公告)日：2010-08-10

申请号：US11476789

申请日：2006-06-29

申请人： Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Jae-Sung Roh ,  Jin-Hyock Kim

发明人： Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Jae-Sung Roh ,  Jin-Hyock Kim

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02189 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31641 ,  H01L28/40 ,  Y02T50/67

摘要： A method for forming a zirconium oxide (ZrO2) layer on a substrate in a chamber includes controlling a temperature of the substrate; and repeating a unit cycle of an atomic layer deposition (ALD) method. The unit cycle includes supplying a zirconium (Zr) source into a chamber, parts of the Zr source being adsorbed into a surface of the substrate; purging non-adsorbed parts of the Zr source remaining inside the chamber; supplying a reaction gas for reacting with the adsorbed parts of the Zr source; and purging non-reacted parts of the reaction gas remaining inside the chamber and reaction byproducts, wherein the temperature of the substrate and a concentration of the reaction gas are controlled such that the ZrO2 layer is formed with a tetragonal structure.

摘要翻译： 在室内的基板上形成氧化锆（ZrO 2）层的方法包括：控制基板的温度; 并重复原子层沉积（ALD）方法的单位周期。 单元循环包括将锆（Zr）源供应到室中，部分Zr源被吸附到衬底的表面中; 吹扫保留在室内的Zr源的未吸附部分; 供给与Zr源的吸附部反应的反应气体， 并且清洗保留在室内的反应气体的未反应部分和反应副产物，其中控制基板的温度和反应气体的浓度使得ZrO 2层形成为四方结构。

公开(公告)号：US20070148897A1

公开(公告)日：2007-06-28

申请号：US11448797

申请日：2006-06-08

申请人： Seung-Jin Yeom ,  Deok-Sin Kil ,  Jin-Hyock Kim ,  Ki-Seon Park ,  Han-Sang Song ,  Jae-Sung Roh

发明人： Seung-Jin Yeom ,  Deok-Sin Kil ,  Jin-Hyock Kim ,  Ki-Seon Park ,  Han-Sang Song ,  Jae-Sung Roh

IPC分类号： H01L21/20

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/91

摘要： A method for fabricating a capacitor in a semiconductor device is provided. The method includes forming an insulation layer over a substrate; flushing a metal source onto the insulation layer to change a characteristic of a surface of the insulation layer to improve adherence of a metal-based material to the surface of the insulation layer; forming a storage node comprising the metal-based material over the flushed insulation layer; and sequentially forming a dielectric layer and a plate electrode over the metal-based storage node.

摘要翻译： 提供了一种在半导体器件中制造电容器的方法。 该方法包括在衬底上形成绝缘层; 将金属源冲洗到绝缘层上以改变绝缘层的表面的特性，以改善金属基材料对绝缘层表面的粘附性; 在所述冲洗绝缘层上形成包括所述金属基材料的存储节点; 并且在金属基存储节点上依次形成电介质层和平板电极。

公开(公告)号：US07835134B2

公开(公告)日：2010-11-16

申请号：US12569769

申请日：2009-09-29

申请人： Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Jae-Sung Roh

发明人： Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Jae-Sung Roh

IPC分类号： H01G4/06

CPC分类号： H01L21/02189 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3162 ,  H01L21/31641 ,  H01L28/40 ,  H01L28/56

摘要： A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.

摘要翻译： 电容器包括下电极，下电极上的电介质结构，所述电介质结构包括至少一个结晶的氧化锆（ZrO 2）层和至少一个无定形氧化铝（Al 2 O 3）层，以及形成在电介质结构上的上电极 。 一种制造电容器的方法包括在一定结构上形成下电极，在下电极上形成包括至少一个结晶氧化锆（ZrO 2）层和至少一个非晶形氧化铝（Al 2 O 3）层的电介质结构， 介电结构上的上电极。

公开(公告)号：US20080003741A1

公开(公告)日：2008-01-03

申请号：US11646481

申请日：2006-12-28

申请人： Ki-Seon Park ,  Jae-Sung Roh ,  Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Jin-Hyock Kim ,  Kee-Jeung Lee

发明人： Ki-Seon Park ,  Jae-Sung Roh ,  Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Jin-Hyock Kim ,  Kee-Jeung Lee

IPC分类号： H01L21/8244

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method for fabricating a cylindrical capacitor. The method includes forming an isolation structure including an interlayer on a substrate, the substrate having a plurality of contact plugs formed therein, forming a plurality of opening regions by etching the isolation structure, thereby exposing selected portions of the contact plugs, forming storage nodes on a surface of the opening regions, etching selected portions of the isolation structure to form a patterned interlayer that encompasses selected portions of the storage nodes, thereby supporting the storage nodes, removing remaining portions of the isolation structure, and removing the patterned interlayer to expose inner and outer walls of the storage nodes.

摘要翻译： 一种制造圆柱形电容器的方法。 所述方法包括在基板上形成包括中间层的隔离结构，所述基板具有形成在其中的多个接触塞，通过蚀刻隔离结构形成多个开口区域，从而暴露接触塞的选定部分，形成储存节点 蚀刻开口区域的表面，蚀刻隔离结构的选定部分以形成包围存储节点的选定部分的图案化中间层，从而支撑存储节点，去除隔离结构的剩余部分，以及去除图案化中间层以暴露内部 和存储节点的外壁。

公开(公告)号：US08946047B2

公开(公告)日：2015-02-03

申请号：US12794412

申请日：2010-06-04

申请人： Jin-Hyock Kim ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Han-Sang Song ,  Deok-Sin Kil ,  Jae-Sung Roh

发明人： Jin-Hyock Kim ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Han-Sang Song ,  Deok-Sin Kil ,  Jae-Sung Roh

IPC分类号： H01L21/20 ,  H01L49/02 ,  H01L27/108 ,  H01L21/8239

CPC分类号： H01L27/10844 ,  H01L21/8239 ,  H01L27/10808 ,  H01L27/10835 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/91

摘要： A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.

公开(公告)号：US20100014212A1

公开(公告)日：2010-01-21

申请号：US12569769

申请日：2009-09-29

申请人： Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Jae-Sung Roh

发明人： Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Jae-Sung Roh

IPC分类号： H01G4/10 ,  B32B37/14 ,  B05D5/12

CPC分类号： H01L21/02189 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3162 ,  H01L21/31641 ,  H01L28/40 ,  H01L28/56

摘要： A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.

摘要翻译： 电容器包括下电极，下电极上的电介质结构，包括至少一个结晶的氧化锆ZrO 2的电介质结构）层和至少一个非晶形氧化铝（Al 2 O 3）层，以及形成在电介质结构上的上电极。 一种制造电容器的方法包括在一定结构上形成下电极，在下电极上形成包括至少一个结晶氧化锆（ZrO 2）层和至少一个非晶形氧化铝（Al 2 O 3）层的电介质结构， 介电结构上的上电极。

公开(公告)号：US07361544B2

公开(公告)日：2008-04-22

申请号：US11448797

申请日：2006-06-08

申请人： Seung-Jin Yeom ,  Deok-Sin Kil ,  Jin-Hyock Kim ,  Ki-Seon Park ,  Han-Sang Song ,  Jae-Sung Roh

发明人： Seung-Jin Yeom ,  Deok-Sin Kil ,  Jin-Hyock Kim ,  Ki-Seon Park ,  Han-Sang Song ,  Jae-Sung Roh

IPC分类号： H01L21/8242

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/91

摘要： A method for fabricating a capacitor in a semiconductor device is provided. The method includes forming an insulation layer over a substrate; flushing a metal source onto the insulation layer to change a characteristic of a surface of the insulation layer to improve adherence of a metal-based material to the surface of the insulation layer; forming a storage node comprising the metal-based material over the flushed insulation layer; and sequentially forming a dielectric layer and a plate electrode over the metal-based storage node.

摘要翻译： 提供了一种在半导体器件中制造电容器的方法。 该方法包括在衬底上形成绝缘层; 将金属源冲洗到绝缘层上以改变绝缘层的表面的特性，以改善金属基材料对绝缘层表面的粘附性; 在所述冲洗绝缘层上形成包括所述金属基材料的存储节点; 并且在金属基存储节点上依次形成电介质层和平板电极。