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发明申请
US20070102821A1 Use of Supercritical Fluid for Low Effective Dielectric Constant Metallization 有权
超临界流体用于低效介电常数金属化的应用

Use of Supercritical Fluid for Low Effective Dielectric Constant Metallization
摘要：
An embodiment of the invention is a method of manufacturing an integrated circuit. The method includes forming a capping layer of a back end structure (step 706), drilling an extraction line from the capping layer to an inter-metal dielectric layer (step 708), performing a supercritical fluid process to remove portions of the inter-metal dielectric layer that are coupled to the extraction line (step 710): thereby forming a denuded dielectric region. Another embodiment of the invention is an integrated circuit 2 having a back-end structure 5 coupled to a front-end structure 4. The back-end structure 5 having a first metal level 22. The first metal level 22 having metal interconnects 15 and an inter-metal dielectric layer 19. The back-end structure 5 further containing an extraction line 24 and a denuded dielectric region 25 coupled to the extraction line 24.
摘要（中）：

本发明的实施例是一种制造集成电路的方法。 该方法包括形成后端结构的覆盖层（步骤706），将覆盖层从提覆层钻到金属间介电层（步骤708），执行超临界流体处理以去除金属间的部分 电介质层，其与所述提取线耦合（步骤710）：由此形成裸露的电介质区域。 本发明的另一实施例是具有耦合到前端结构4的后端结构5的集成电路2。 后端结构5具有第一金属层22。 第一金属层22具有金属互连15和金属间介电层19。 后端结构5还包含抽出线24和耦合到提取线24的裸露介质区25。

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