发明申请
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
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申请号： US10582983申请日： 2004-12-07
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公开(公告)号： US20070107843A1公开(公告)日： 2007-05-17
- 发明人: Yuichi Kawano , Tadashi Shimazu , Toshihiko Nishimori , Kazuto Yoshida
- 申请人： Yuichi Kawano , Tadashi Shimazu , Toshihiko Nishimori , Kazuto Yoshida
- 申请人地址： JP Tokyo 108-8215
- 专利权人： Mitsubishi Heavy Industries, Ltd.
- 当前专利权人： Mitsubishi Heavy Industries, Ltd.
- 当前专利权人地址： JP Tokyo 108-8215
- 优先权： JP2003-426648 20031224
- 国际申请： PCT/JP04/18187 WO 20041207
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C23C16/00
摘要：
In a film-forming apparatus for forming a thin film (15) on a substrate (6) by supplying a gas (13) through a gas nozzle (14) into a vacuum chamber (1) and transforming the gas (13) into a plasma by applying a current to a high-frequency antenna (7), a ceramic inner cylinder (20) is arranged so as to contact with the vacuum chamber (1) at only a small area of the cylinder for preventing adhesion of the film-forming component onto the inner wall of the vacuum chamber (1). In this film-forming apparatus, it is possible to suppress generation of particles and to reduce the workload of the cleaning process.
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