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公开(公告)号：US08960124B2
公开(公告)日：2015-02-24
申请号：US13322192
申请日：2010-05-24
Applicant: Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
Inventor： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
CPC classification number: H01J37/32577 , C23C16/4404 , C23C16/50 , H01J37/32467 , H01J37/32504 , Y10S156/916
Abstract: Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.
Abstract translation: 提供了一种等离子体处理装置和等离子体处理方法，其中由于设置在真空容器内部的内筒的内部电位而产生的颗粒减少。 等离子体处理装置在金属真空室（11）的内部，由表面氧化铝构成的内筒（15）在等离子体扩散区域内配置基板，进行等离子体处理。 在内筒15的下端设有多个与真空室11相接触的突出部15a，每个的前端部15b的防蚀铝膜16， 突出部分（15a）被移除，并且内筒和真空室（11）彼此电连接。
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公开(公告)号：US20120135164A1
公开(公告)日：2012-05-31
申请号：US13376067
申请日：2010-05-24
Applicant: Ryuichi Matsuda , Kazuto Yoshida
Inventor： Ryuichi Matsuda , Kazuto Yoshida
IPC: C23C16/458 , C23C16/50
CPC classification number: H01L21/68785 , C23C16/4412 , H01L21/68792
Abstract: Provided are a plasma processing apparatus and a plasma processing method, wherein a substrate supporting table is supported such that nonuniformity of heat release is eliminated and maintenance is facilitated. In the plasma CVD apparatus (10), a supporting beam (12), which has inside thereof a through hole (12c) penetrating the facing side walls (11a) of a vacuum chamber (11) and traverses the vacuum chamber (11) by passing through the center of the vacuum chamber, is integrally formed with the vacuum chamber (11). In the center portion of the upper surface of the supporting beam (12), an upper surface opening (12a) for attaching a substrate supporting table (13) is provided, and a substrate supporting table (13) having a cylindrical shape is attached to the upper surface opening (12a) by having therebetween a first seal member that seals together the vacuum side and the atmosphere side.
Abstract translation: 提供了一种等离子体处理装置和等离子体处理方法，其中支撑基板支撑台以消除不均匀的热释放并且便于维护。 在等离子体CVD装置（10）中，支撑梁（12）的内部具有穿过真空室（11）的相对侧壁（11a）的通孔（12c），并通过真空室（11）横穿真空室 通过真空室的中心与真空室（11）整体形成。 在支撑梁（12）的上表面的中心部分设置有用于安装基板支撑台（13）的上表面开口（12a），并且将具有圆柱形状的基板支撑台（13）安装到 上表面开口（12a）之间具有将真空侧和大气侧密封在一起的第一密封构件。
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公开(公告)号：US07520246B2
公开(公告)日：2009-04-21
申请号：US11240358
申请日：2005-10-03
Applicant: Ryuichi Matsuda , Noriaki Ueda , Kazuto Yoshida
Inventor： Ryuichi Matsuda , Noriaki Ueda , Kazuto Yoshida
IPC: C23C16/00 , C23F1/00 , H01L21/306
Abstract: A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.
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公开(公告)号：US20090127227A1
公开(公告)日：2009-05-21
申请号：US12065373
申请日：2007-02-15
Applicant: Ryuichi Matsuda , Masahiko Inoue , Kazuto Yoshida , Tadashi Shimazu
Inventor： Ryuichi Matsuda , Masahiko Inoue , Kazuto Yoshida , Tadashi Shimazu
CPC classification number: H01J37/32743 , H01J37/3244
Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
Abstract translation: 提供了一种等离子体处理装置和等离子体处理方法，通过该处理方法在处理期间降低了等离子体损伤。 在对基板（5）进行期望的等离子体处理时，向处理室（2）供给用于进出基板（5）的惰性气体，将处理室（2）中的压力波动调整为 处于规定范围内，并且产生在处理室（2）中供应的惰性气体的等离子体（20）。 通过将等离子体功率控制在规定范围内，使衬底（5）的传送区域中的等离子体（20）的密度降低，并且将衬底（5）从支撑台（4） ）。
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公开(公告)号：US20070107843A1
公开(公告)日：2007-05-17
申请号：US10582983
申请日：2004-12-07
Applicant: Yuichi Kawano , Tadashi Shimazu , Toshihiko Nishimori , Kazuto Yoshida
Inventor： Yuichi Kawano , Tadashi Shimazu , Toshihiko Nishimori , Kazuto Yoshida
IPC: H01L21/306 , C23C16/00
CPC classification number: H01J37/32477 , C23C16/4401
Abstract: In a film-forming apparatus for forming a thin film (15) on a substrate (6) by supplying a gas (13) through a gas nozzle (14) into a vacuum chamber (1) and transforming the gas (13) into a plasma by applying a current to a high-frequency antenna (7), a ceramic inner cylinder (20) is arranged so as to contact with the vacuum chamber (1) at only a small area of the cylinder for preventing adhesion of the film-forming component onto the inner wall of the vacuum chamber (1). In this film-forming apparatus, it is possible to suppress generation of particles and to reduce the workload of the cleaning process.
Abstract translation: 在通过将气体（13）通过气体喷嘴（14）供给到真空室（1）中并将气体（13）变换为气体（13）而在基板（6）上形成薄膜（15）的成膜设备中， 等离子体通过向高频天线（7）施加电流，陶瓷内筒（20）布置成仅在气缸的小区域与真空室（1）接触，以防止膜 - 形成组件到真空室（1）的内壁上。 在该成膜装置中，可以抑制颗粒的产生并减少清洗过程的工作量。
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Patent Agency Ranking
公开(公告)号：US08480912B2
公开(公告)日：2013-07-09
申请号：US12065373
申请日：2007-02-15
Applicant: Ryuichi Matsuda , Masahiko Inoue , Kazuto Yoshida , Tadashi Shimazu
Inventor： Ryuichi Matsuda , Masahiko Inoue , Kazuto Yoshida , Tadashi Shimazu
CPC classification number: H01J37/32743 , H01J37/3244
Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
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公开(公告)号：US07806078B2
公开(公告)日：2010-10-05
申请号：US11608130
申请日：2006-12-07
Applicant: Kazuto Yoshida
Inventor： Kazuto Yoshida
IPC: C23C16/455 , C23C16/507 , C23C16/06 , C23C16/22
CPC classification number: C23C16/45563 , C23C16/455 , C23C16/507 , H01J37/3244
Abstract: A plasma CVD apparatus has a container, and channels composed of introduction grooves and circumferential grooves for different types of gases are formed within the container. The gases introduced through source gas piping, auxiliary gas piping, and cleaning gas piping are equally supplied to a plurality of supply nozzles, a plurality of auxiliary gas supply nozzles, and a plurality of cleaning gas nozzles. The configuration of the container can be simplified without complicating pipings for the gases.
Abstract translation: 等离子体CVD装置具有容器，并且在容器内形成有用于不同种类的气体的导入槽和周向槽构成的通路。 通过源气体管道，辅助气体管道和清洁气体管道引入的气体同样地供给到多个供给喷嘴，多个辅助气体供给喷嘴和多个清洁气体喷嘴。 可以简化容器的构造，而不会使气体管道复杂化。
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公开(公告)号：US07214820B2
公开(公告)日：2007-05-08
申请号：US10543186
申请日：2004-01-20
Applicant: Shunji Kamiyama , Kazuto Yoshida , Yasuo Chikusa , Jun Matsumoto , Keisuke Matsuyama
Inventor： Shunji Kamiyama , Kazuto Yoshida , Yasuo Chikusa , Jun Matsumoto , Keisuke Matsuyama
IPC: C07B57/00
CPC classification number: C07C211/27 , C07C51/02 , C07C51/412 , C07C51/43 , C07C57/58
Abstract: The present invention provides a method for producing optically active flurbiprofen. The method of the present invention includes mixing racemic flurbiprofen and (S)- or (R)-3-methyl-2-phenylbutylamine in an organic solvent to produce a diastereomeric salt; and treating the diastereomeric salt with an acid in a second solvent. In the method of the present invention, flurbiprofen having a desired absolute configuration can be obtained very efficiently without repeating the procedure for optical resolution a plurality of times.
Abstract translation: 本发明提供一种光学活性氟比洛芬的制备方法。 本发明的方法包括将外消旋氟比洛芬和（S） - 或（R）-3-甲基-2-苯基丁胺在有机溶剂中混合以产生非对映体盐; 并在第二溶剂中用酸处理非对映体盐。 在本发明的方法中，可以非常有效地获得具有期望的绝对构型的氟比洛芬，而不用多次重复光学拆分的步骤。
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公开(公告)号：US06920037B2
公开(公告)日：2005-07-19
申请号：US10623255
申请日：2003-07-18
Applicant: Mitsunori Sano , Takashi Kono , Kazuto Yoshida , Takashige Suzuki
Inventor： Mitsunori Sano , Takashi Kono , Kazuto Yoshida , Takashige Suzuki
CPC classification number: H01G9/012 , H01G9/042 , H01G9/15 , Y10T29/417
Abstract: In a solid electrolytic capacitor, an anode terminal (27 in FIG. 3) has a T-shaped section in which two plate pieces intersect at right angles. One of the two plate pieces is exposed to the mounting surface of the solid electrolytic capacitor, while the other is perpendicularly erected to an anode lead (11). The two plate pieces are made of a series of continuous members.
Abstract translation: 在固体电解电容器中，阳极端子（图3中的27）具有T形截面，其中两个板块成直角相交。 两个板块中的一个暴露于固体电解电容器的安装表面，而另一个垂直地竖立到阳极引线（11）。 两个板块由一系列连续的构件制成。
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10.发明申请公开(公告)号：US20120132619A1
公开(公告)日：2012-05-31
申请号：US13376061
申请日：2010-05-24
Applicant: Ryuichi Matsuda , Kazuto Yoshida
Inventor： Ryuichi Matsuda , Kazuto Yoshida
IPC: C23C16/455 , B05C11/00 , B44C1/22 , C23C16/50
CPC classification number: C23C16/4412
Abstract: A gas discharge structure, and a device and a method for plasma processing which are capable of a uniform gas discharge and have improved maintainability. A pendulum gate valve (15) is eccentrically mounted to a vacuum chamber (11) in such a manner that the center (Mc) of the area of an opening region (M) corresponding to the center value of the recommended value for the use of the opening ratio of the pendulum gate valve (15) coincides with the axis center (Cc) of the vacuum chamber (11).
Abstract translation: 一种气体放电结构，以及能够均匀排气并具有改进的可维护性的等离子体处理的装置和方法。 摆闸阀（15）偏心地安装在真空室（11）上，使得开口区域（M）的区域的中心（Mc）对应于推荐值的中心值，以便使用 摆闸阀（15）的开度比与真空室（11）的轴心（Cc）重合。
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