A semiconductor lamination portion (6) is formed by laminating at least an n-type layer (3) and a p-type layer (5) made of gallium nitride based compound semiconductor so as to form a light emitting portion, and a light transmitting conductive layer (7) is formed on a surface of the semiconductor lamination portion. An upper electrode (8) is formed so as to adhere to an exposed surface of the semiconductor lamination portion exposed by etching a part of the light transmitting conductive layer, and to the light transmitting conductive layer. An electric current blocking means (10) is formed on the exposed surface of the semiconductor lamination portion which is exposed through an opening (7a) of the light transmitting conductive layer, thereby significantly preventing electric current from flowing into a part under the upper electrode while ensuring good adhesion between the upper electrode and the surface of the semiconductor lamination portion. Consequently, there can be obtained a semiconductor light emitting device using gallium nitride based compound semiconductor wherein external quantum efficiency is improved by suppressing light emission under the upper electrode while enhancing adhesion between the upper electrode and the semiconductor layer.