发明申请
- 专利标题： Semiconductor device and dicing method for semiconductor substrate
- 专利标题（中）： 半导体器件和半导体衬底的切割方法
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申请号： US11600136申请日： 2006-11-16
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公开(公告)号： US20070111478A1公开(公告)日： 2007-05-17
- 发明人: Atsushi Komura , Muneo Tamura , Kazuhiko Sugiura , Hirotsugu Funato , Yumi Maruyama , Tetsuo Fujii , Kenji Kohno
- 申请人： Atsushi Komura , Muneo Tamura , Kazuhiko Sugiura , Hirotsugu Funato , Yumi Maruyama , Tetsuo Fujii , Kenji Kohno
- 申请人地址： JP Kariya-city 448-8661
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city 448-8661
- 优先权： JP2005-331206 20051116; JP2005-331219 20051116; JP2005-331221 20051116; JP2006-225394 20060822; JP2006-225395 20060822; JP2006-271748 20061003
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.
公开/授权文献
- US07901967B2 Dicing method for semiconductor substrate 公开/授权日：2011-03-08
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