公开(公告)号：US20070111478A1

公开(公告)日：2007-05-17

申请号：US11600136

申请日：2006-11-16

申请人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

发明人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

IPC分类号： H01L21/00

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.

摘要翻译： 一种用于切割半导体衬底的方法包括：通过在衬底上照射激光束在衬底中形成重整层; 与切割线一起在基板上形成凹槽; 并向基板施加力以切割重整层处的基板作为切割的起点。 槽具有预定的深度，使得槽设置在重整层附近，并且该力在槽处提供应力。

公开(公告)号：US07901967B2

公开(公告)日：2011-03-08

申请号：US11600136

申请日：2006-11-16

申请人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

发明人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

IPC分类号： H01L21/00

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.

摘要翻译： 一种用于切割半导体衬底的方法包括：通过在衬底上照射激光束在衬底中形成重整层; 与切割线一起在基板上形成凹槽; 并向基板施加力以切割重整层处的基板作为切割的起点。 槽具有预定的深度，使得槽设置在重整层附近，并且该力在槽处提供应力。

公开(公告)号：US20070111480A1

公开(公告)日：2007-05-17

申请号：US11586558

申请日：2006-10-26

申请人： Yumi Maruyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Hirotsugu Funato

发明人： Yumi Maruyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Hirotsugu Funato

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/009 ,  B23K26/18 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/67132

摘要： A semiconductor wafer has two faces, one of which is a laser light incident face. A dicing sheet is attached to the other face of the wafer, so that it is stretched to thereby apply tensile stress to a laser-reformed region and cause cutting with the reformed region taken as a starting point for cutting. A protection layer, such as light scattering projections and depressions, a light scattering member or a light reflecting member, is provided between the wafer and the dicing sheet to scatter or reflect the laser light passing through the wafer. Thus, the dicing sheet can be protected from being damaged because the laser light converging point is not formed in the dicing sheet.

摘要翻译： 半导体晶片具有两个面，其中之一是激光入射面。 将切割片安装在晶片的另一面上，使其被拉伸，从而对激光重整区域施加拉伸应力，并以重新形成的区域作为切割起点进行切割。 在晶片和切割片之间设置有诸如光散射凸起和凹陷的保护层，光散射部件或光反射部件，以散射或反射穿过晶片的激光。 因此，由于在切割片中没有形成激光聚光点，所以可以防止切割片的损伤。

公开(公告)号：US20070111390A1

公开(公告)日：2007-05-17

申请号：US11598654

申请日：2006-11-14

申请人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

发明人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

IPC分类号： H01L21/00 ,  H01L23/02

CPC分类号： H01L21/67132 ,  B23K26/009 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3192 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

摘要翻译： 与晶片分离的器件包括：具有侧壁的芯片，其在器件与晶片分离的情况下由晶片的切割表面提供; 以及设置在芯片的侧壁上的保护构件，用于保护芯片免受来自切割表面的灰尘的污染。 在该装置中，晶片的切割面被保护部件覆盖，从而防止芯片被灰尘污染。

公开(公告)号：US20070111484A1

公开(公告)日：2007-05-17

申请号：US11600097

申请日：2006-11-16

申请人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura

发明人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336

摘要： A dicing sheet frame, which is used when a semiconductor wafer adhered to a dicing sheet is cut into chips, includes a plurality of frame parts and a connecting device. The plurality of frame parts supports the dicing sheet. The connecting device connects the plurality of frame parts such that the plurality of frame parts has an annular shape.

摘要翻译： 当将粘附到切割片上的半导体晶片切割成芯片时使用的切割片框架包括多个框架部件和连接装置。 多个框架部件支撑切割片。 连接装置连接多个框架部件，使得多个框架部件具有环形形状。

公开(公告)号：US07662668B2

公开(公告)日：2010-02-16

申请号：US11591496

申请日：2006-11-02

申请人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

发明人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/16 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/3025

摘要： A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

摘要翻译： 用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

公开(公告)号：US07838331B2

公开(公告)日：2010-11-23

申请号：US11598654

申请日：2006-11-14

申请人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

发明人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  B23K26/009 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3192 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

摘要翻译： 与晶片分离的器件包括：具有侧壁的芯片，其在器件与晶片分离的情况下由晶片的切割表面提供; 以及设置在芯片的侧壁上的保护构件，用于保护芯片免受来自切割表面的灰尘的污染。 在该装置中，晶片的切割面被保护部件覆盖，从而防止芯片被灰尘污染。

公开(公告)号：US20070111476A1

公开(公告)日：2007-05-17

申请号：US11591496

申请日：2006-11-02

申请人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

发明人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/16 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/3025

摘要： A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

摘要翻译： 用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

公开(公告)号：US20060220183A1

公开(公告)日：2006-10-05

申请号：US11392739

申请日：2006-03-30

申请人： Makoto Asai ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Tetsuo Fujii

发明人： Makoto Asai ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Tetsuo Fujii

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/78

摘要： A semiconductor wafer includes: a first layer having a first refraction index; a second layer having a second refraction index, which is different from the first refraction index; a plurality of semiconductor elements; and a layer removal region. The semiconductor elements are capable of being separated each other by irradiating a laser beam on the first layer along with a cutting line. The laser beam irradiation provides a modified region in the first layer so that the semiconductor elements are capable of being separated by a crack generated in the modified region. The layer removal region is provided such that the second layer in the layer removal region is removed from the wafer.

摘要翻译： 半导体晶片包括：具有第一折射率的第一层; 具有与第一折射率不同的第二折射率的第二层; 多个半导体元件; 和层去除区域。 半导体元件能够通过与切割线一起照射第一层上的激光束而彼此分离。 激光束照射在第一层中提供改性区域，使得半导体元件能够被改性区域中产生的裂纹分离。 提供了去除层，使得去除层中的第二层从晶片上去除。

公开(公告)号：US07598118B2

公开(公告)日：2009-10-06

申请号：US11585114

申请日：2006-10-24

申请人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura

发明人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura

IPC分类号： H01L21/00

CPC分类号： B81C1/00269 ,  B81C2203/0127 ,  G01P1/023 ,  G01P15/0802

摘要： A method of manufacturing a semiconductor sensor includes a forming step, a preparing step, a fixing step and a separating step. In the forming step, a plurality of caps made of resin is formed on a supporting substrate through a separable agent. Each of the caps has a cavity therein. In the preparing step, a semiconductor wafer is prepared, on which a plurality of sensor elements are formed. In the fixing step, the caps are fixed to the semiconductor wafer. Each cavity of the caps corresponds to each of the sensor elements. In the separating step, the separable agent and the supporting substrate are separated from the caps so as to leave the caps on the semiconductor wafer.

摘要翻译： 制造半导体传感器的方法包括形成步骤，制备步骤，定影步骤和分离步骤。 在成形步骤中，通过可分离剂在支撑基材上形成多个由树脂制成的盖。 每个盖在其中具有空腔。 在准备步骤中，制备半导体晶片，在其上形成多个传感器元件。 在固定步骤中，盖固定到半导体晶片。 盖的每个腔对应于每个传感器元件。 在分离步骤中，可分离剂和支撑基材与盖分离，以便将半导体晶片上的盖留下。