利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.025 秒)

    Wafer product and processing method therefor
    3.
    发明申请
    Wafer product and processing method therefor 审中-公开
    晶圆产品及其加工方法

    公开(公告)号：US20070111480A1

    公开(公告)日：2007-05-17

    申请号：US11586558

    申请日：2006-10-26

    申请人： Yumi Maruyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Hirotsugu Funato

    发明人： Yumi Maruyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Hirotsugu Funato

    IPC分类号： H01L21/00

    CPC分类号： H01L21/78 ,  B23K26/009 ,  B23K26/18 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/67132

    摘要： A semiconductor wafer has two faces, one of which is a laser light incident face. A dicing sheet is attached to the other face of the wafer, so that it is stretched to thereby apply tensile stress to a laser-reformed region and cause cutting with the reformed region taken as a starting point for cutting. A protection layer, such as light scattering projections and depressions, a light scattering member or a light reflecting member, is provided between the wafer and the dicing sheet to scatter or reflect the laser light passing through the wafer. Thus, the dicing sheet can be protected from being damaged because the laser light converging point is not formed in the dicing sheet.

    摘要翻译： 半导体晶片具有两个面，其中之一是激光入射面。 将切割片安装在晶片的另一面上，使其被拉伸，从而对激光重整区域施加拉伸应力，并以重新形成的区域作为切割起点进行切割。 在晶片和切割片之间设置有诸如光散射凸起和凹陷的保护层，光散射部件或光反射部件，以散射或反射穿过晶片的激光。 因此，由于在切割片中没有形成激光聚光点，所以可以防止切割片的损伤。

    Cap attachment structure, semiconductor sensor device and method
    4.
    发明申请
    Cap attachment structure, semiconductor sensor device and method 审中-公开
    盖附件结构，半导体传感器装置及方法

    公开(公告)号：US20070232107A1

    公开(公告)日：2007-10-04

    申请号：US11723431

    申请日：2007-03-20

    申请人： Kazuhiko Sugiura ,  Hirotsugu Funato ,  Tetsuo Fujii ,  Yumi Maruyama

    发明人： Kazuhiko Sugiura ,  Hirotsugu Funato ,  Tetsuo Fujii ,  Yumi Maruyama

    IPC分类号： H01R33/02

    CPC分类号： H05K5/0091 ,  B81C1/00269 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

    摘要： In an attachment structure, a protective cap is provided with an adhesion layer on its outer peripheral edge part and its internal surface. The protective cap is bonded and fixed to an adherend member through the adhesion layer. This attachment structure can be suitably used for a semiconductor device. Alternatively, in a semiconductor device, a protective cap can be bonded using an adhesive. In this case, an outer peripheral edge part of the protective cap has a first end positioned on its inner rim surface, and a second end positioned on its outer rim surface. Furthermore, the first end protrudes toward a sensor chip more than the second end, and is adjacent to the sensor chip.

    摘要翻译： 在附接结构中，保护盖在其外周边缘部分及其内表面上设置有粘附层。 保护帽通过粘合层粘合固定在被粘物上。 这种连接结构可以适用于半导体器件。 或者，在半导体器件中，可以使用粘合剂粘合保护帽。 在这种情况下，保护盖的外周边缘部分具有位于其内缘表面上的第一端和位于其外缘表面上的第二端。 此外，第一端比传感器芯片更靠近传感器芯片，并且与传感器芯片相邻。

    Semiconductor wafer
    5.
    发明申请
    Semiconductor wafer 审中-公开
    半导体晶圆

    公开(公告)号：US20070111477A1

    公开(公告)日：2007-05-17

    申请号：US11600099

    申请日：2006-11-16

    申请人： Yumi Maruyama ,  Tetsuo Fujii

    发明人： Yumi Maruyama ,  Tetsuo Fujii

    IPC分类号： H01L21/00 ,  H01L23/544

    CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

    摘要： A semiconductor wafer is disclosed for which irradiation of a laser beam forms a modified region due to multiphoton absorption to thereby facilitate dicing of the semiconductor wafer. The semiconductor wafer includes a formation member and a scribe groove located on the formation member according to an irradiation position of the laser beam. The scribe groove defines an open end and a bottom end. A width of the scribe groove is greater at the open end than at the bottom end.

    摘要翻译： 公开了半导体晶片，其由于多光子吸收而激光束的照射形成改质区域，从而有利于半导体晶片的切割。 半导体晶片包括根据激光束的照射位置位于形成构件上的形成构件和划​​线槽。 划线槽限定开口端和底端。 划线槽的宽度在开口端大于底端宽度。