发明申请
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11655261申请日： 2007-01-19
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公开(公告)号： US20070117405A1公开(公告)日： 2007-05-24
- 发明人: Yoichi Sasaki , Koichi Ohto , Noboru Morita , Tatsuya Usami , Hidenobu Miyamoto
- 申请人： Yoichi Sasaki , Koichi Ohto , Noboru Morita , Tatsuya Usami , Hidenobu Miyamoto
- 申请人地址： JP KANAGAWA
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP KANAGAWA
- 优先权： JP2004-027270 20040203
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.
公开/授权文献
- US07615498B2 Method of manufacturing a semiconductor device 公开/授权日：2009-11-10
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