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    Normally-white twisted-nematic-mode LCD device
    1.
    发明授权
    Normally-white twisted-nematic-mode LCD device 有权
    普通白色扭曲向列型液晶显示器件

    公开(公告)号：US07804567B2

    公开(公告)日：2010-09-28

    申请号：US11280569

    申请日：2005-11-16

    申请人： Hidenori Ikeno ,  Yoichi Sasaki

    发明人： Hidenori Ikeno ,  Yoichi Sasaki

    IPC分类号： G02F1/1335

    CPC分类号： G02F1/133632 ,  G02F1/1396 ,  G02F2203/66 ,  G02F2413/105

    摘要： A normally-white twisted-nematic mode LCD device includes a first optical compensation film between a light-incident-side polarization film and an LC cell, and a second optical compensation film between a light-emitting-side polarization film and the LC cell. The optical axis of the first (second) optical compensation film projected onto the substrate surface is substantially parallel to the longer axis of an equivalent refractive index ellipsoid of a residual retardation of the LC layer in the vicinity of a light-incident-side (light-emitting-side) substrate upon display of black color.

    摘要翻译： 普通白色双向向列模式LCD装置包括光入射侧偏振膜和LC单元之间的第一光学补偿膜，以及发光侧偏振膜和LC单元之间的第二光学补偿膜。 投影到基板表面上的第一（第二）光学补偿膜的光轴基本上平行于光入射侧附近的LC层的残留延迟的等效折射率椭圆体的长轴（光 发光面）基板显示黑色。

    Method of manufacturing a semiconductor device
    2.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07615498B2

    公开(公告)日：2009-11-10

    申请号：US11655261

    申请日：2007-01-19

    申请人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

    发明人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832

    摘要： A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.

    摘要翻译： 半导体器件200包括形成在半导体衬底（未示出）上的SiCN膜202，形成在其上的第一SiOC膜204，形成在其上的SiCN膜208，形成在其上的第二SiOC膜210，SiO 2膜212和SiCN膜 214。 第一SiOC膜204具有形成在其中的阻挡金属层216和通孔218，并且第二SiOC膜210具有形成在其中的阻挡金属层220和布线金属层222。 第二SiOC膜210的碳含量被调节为大于第一SiOC膜204的碳含量。这使得可以在保持绝缘夹层的低介电常数的同时，改善绝缘中间层与其它绝缘层的粘附性。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07531891B2

    公开(公告)日：2009-05-12

    申请号：US11006529

    申请日：2004-12-08

    申请人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

    发明人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

    IPC分类号： H01L23/58 ,  H01L29/00 ,  H01L21/31

    CPC分类号： H01L21/76801 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

    摘要： A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes. A SiOC film is deposited to a thickness of 300 nm via a plasma CVD process, in which a flow rate of trimethylsilane gas is stepwise increased. In this case, the film density of the deposited SiOC film is gradually decreased by stepwise increasing the flow rate of trimethylsilane gas. Since trimethylsilane contains methyl group, trimethylsilane has more bulky molecular structure in comparison with monosilane or the like. Thus, the film density is decreased by increasing the amount of trimethylsilane in the reactant gas.

    摘要翻译： 通过在具有膜密度分布的层间绝缘膜中提供多层膜，其中膜密度逐渐变化，提供了具有改善的构成层间绝缘膜的膜之间粘附性的半导体器件。 通过等离子体CVD工艺沉积厚度为300nm的SiOC膜，其中三甲基硅烷气体的流量逐步增加。 在这种情况下，通过逐步增加三甲基硅烷气体的流量，沉积的SiOC膜的膜密度逐渐降低。 由于三甲基硅烷含有甲基，因此与甲硅烷等相比，三甲基硅烷具有更大的分子结构。 因此，通过增加反应气体中的三甲基硅烷的量来降低膜密度。

    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    液晶显示装置及其制造方法

    公开(公告)号：US20080123036A1

    公开(公告)日：2008-05-29

    申请号：US11944473

    申请日：2007-11-23

    申请人： Yoichi SASAKI ,  Teruaki Suzuki ,  Mitsuhiro Sugimoto ,  Chikaaki Mizoguchi ,  Hiromitsu Tanaka

    发明人： Yoichi SASAKI ,  Teruaki Suzuki ,  Mitsuhiro Sugimoto ,  Chikaaki Mizoguchi ,  Hiromitsu Tanaka

    IPC分类号： G02F1/1337

    CPC分类号： G02F1/13378 ,  G02F1/133723 ,  G02F1/134363

    摘要： A manufacturing method of the present invention is applied to manufacture of a liquid crystal display device comprising an array board, an opposing board opposing the array board, and a liquid crystal layer interposed between the pair of boards. The method includes a step of performing alignment processing on an alignment film formed on the surface of at least one of the pair of boards in contact with the liquid crystal. The alignment processing is performed by irradiating energy having an anisotropy such as ion beams to the alignment film in a plurality of steps while the energy intensity is set to be lowest in the final irradiation step.

    摘要翻译： 本发明的制造方法用于液晶显示装置的制造，该液晶显示装置包括阵列基板，与该阵列基板相对的对置基板和插入该一对基板之间的液晶层。 该方法包括对形成在与液晶接触的一对板中的至少一个的表面上的取向膜进行取向处理的步骤。 在最终照射步骤中将能量强度设定为最低时，通过以多个步骤将具有各向异性的离子束的能量照射到取向膜来进行取向处理。

    Semiconductor device and method of manufacturing a semiconductor device
    9.
    发明授权
    Semiconductor device and method of manufacturing a semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US07180191B2

    公开(公告)日：2007-02-20

    申请号：US11048929

    申请日：2005-02-03

    申请人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

    发明人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832

    摘要： A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.

    摘要翻译： 半导体器件200包括形成在半导体衬底（未示出）上的SiCN膜202，形成在其上的第一SiOC膜204，形成在其上的SiCN膜208，形成在其上的第二SiOC膜210， SUB>膜212和形成在其上的SiCN膜214。 第一SiOC膜204具有形成在其中的阻挡金属层216和通孔218，并且第二SiOC膜210具有形成在其中的阻挡金属层220和布线金属层222。 第二SiOC膜210的碳含量被调整为大于第一SiOC膜204的碳含量。 这使得可以在保持绝缘中间层的低介电常数的同时提高绝缘中间层与其它绝缘层的粘附性。