发明申请
- 专利标题： Non-volatile memory device and fabrication method thereof
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US11604222申请日： 2006-11-27
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公开(公告)号： US20070122978A1公开(公告)日： 2007-05-31
- 发明人: Byoung Choi , Ki Lee , Ho Chung , Jun Yi , Sung Jung , Hyun Kim , Jun Kim
- 申请人： Byoung Choi , Ki Lee , Ho Chung , Jun Yi , Sung Jung , Hyun Kim , Jun Kim
- 优先权： KR2005-0114422 20051128
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/76
摘要：
A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.
公开/授权文献
- US07553720B2 Non-volatile memory device and fabrication method thereof 公开/授权日：2009-06-30
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