发明申请
- 专利标题： Semiconductor device and method for producing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10575631申请日： 2004-09-29
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公开(公告)号： US20070132009A1公开(公告)日： 2007-06-14
- 发明人: Kiyoshi Takeuchi , Koichi Terashima , Hitoshi Wakabayashi , Shigeharu Yamagami , Atsushi Ogura , Masayasu Tanaka , Masahiro Nomura , Koichi Takeda , Toru Tatsumi , Koji Watanabe
- 申请人： Kiyoshi Takeuchi , Koichi Terashima , Hitoshi Wakabayashi , Shigeharu Yamagami , Atsushi Ogura , Masayasu Tanaka , Masahiro Nomura , Koichi Takeda , Toru Tatsumi , Koji Watanabe
- 优先权： JP2003-351029 20031009; JP2004-271506 20040917
- 国际申请： PCT/JP04/14243 WO 20040929
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.
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