发明申请
- 专利标题: Semiconductor memory device and method of fabricating the same
- 专利标题(中): 半导体存储器件及其制造方法
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申请号: US11585087申请日: 2006-10-24
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公开(公告)号: US20070134914A1公开(公告)日: 2007-06-14
- 发明人: Seong-Hwee Cheong , Sang-Woo Lee , Jong-Won Hong , Seung-Gil Yang , Kyung-In Choi , Hyun-Bae Lee
- 申请人: Seong-Hwee Cheong , Sang-Woo Lee , Jong-Won Hong , Seung-Gil Yang , Kyung-In Choi , Hyun-Bae Lee
- 优先权: KR10-2005-0100442 20051024
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L21/44
摘要:
A semiconductor memory device and a method of fabricating the same are disclosed. The semiconductor memory device may include a conductive layer doped with impurities, a non-conductive layer on the conductive layer and undoped with impurities, an interlayer insulating film on the non-conductive layer and having a contact hole for exposing an upper surface of the non-conductive layer, an ohmic tungsten film on the contact hole, a lower portion of the ohmic tungsten film permeating the non-conductive layer to come in contact with the conductive layer, a tungsten nitride film on the contact hole on the ohmic tungsten film, and a tungsten film on the tungsten nitride film to fill the contact hole.