发明申请
- 专利标题： Dual metal gate self-aligned integration
- 专利标题（中）： 双金属栅极自对准集成
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申请号： US11303715申请日： 2005-12-16
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公开(公告)号： US20070138563A1公开(公告)日： 2007-06-21
- 发明人: Alessandro Callegari , Michael Chudzik , Bruce Doris , Vijay Narayanan , Vamsi Paruchuri , Michelle Steen
- 申请人： Alessandro Callegari , Michael Chudzik , Bruce Doris , Vijay Narayanan , Vamsi Paruchuri , Michelle Steen
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238
摘要：
A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and pFET behavior, respectively, without including an upper polysilicon gate electrode is provided. The present invention also provides a method of fabricating such a semiconductor structure.
公开/授权文献
- US07569466B2 Dual metal gate self-aligned integration 公开/授权日：2009-08-04
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