发明申请
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体器件及其制造方法
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申请号: US11702058申请日: 2007-02-05
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公开(公告)号: US20070138954A1公开(公告)日: 2007-06-21
- 发明人: Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
- 申请人: Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
- 申请人地址: JP Atsugi-shi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2002-320270 20021101
- 主分类号: H05B33/00
- IPC分类号: H05B33/00
摘要:
(OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. (MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
公开/授权文献
- US07741642B2 Semiconductor device and manufacturing method thereof 公开/授权日:2010-06-22
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