发明申请
- 专利标题： Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof, and methods of fabricating same
- 专利标题（中）： 在其基极区域上具有碳化硅钝化层的碳化硅双极结型晶体管及其制造方法
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申请号： US11315672申请日： 2005-12-22
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公开(公告)号： US20070145378A1公开(公告)日： 2007-06-28
- 发明人: Anant Agarwal , Sumithra Krishnaswami , Sei-Hyung Ryu , D. Capell
- 申请人： Anant Agarwal , Sumithra Krishnaswami , Sei-Hyung Ryu , D. Capell
- 主分类号： H01L31/0312
- IPC分类号： H01L31/0312
摘要：
A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base layer. An epitaxial silicon carbide passivation layer of the first conductivity type is provided on at least a portion of the epitaxial silicon carbide base layer outside the silicon carbide emitter mesa. The epitaxial silicon carbide passivation layer can be configured to fully deplete at zero device bias. Related fabrication methods also are disclosed.
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