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发明申请
US20070145384A1 III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region 有权
具有双异质结构发光区域的III型氮化物发光器件

III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region
摘要：
In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要（中）：

在器件中，III族氮化物发光层设置在n型区域和p型区域之间。 设置在n型区域和发光层之间的第一间隔层被掺杂到掺杂剂浓度为6×10 18 cm -3和5×10 6 19厘米-3 -3。 设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到掺杂剂浓度小于6×10 -3 -3 -3倍 >。

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