发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11646422申请日： 2006-12-28
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公开(公告)号： US20070145600A1公开(公告)日： 2007-06-28
- 发明人: Hisashi Yano , Masakazu Hamada , Kazuyoshi Maekawa , Kenichi Mori
- 申请人： Hisashi Yano , Masakazu Hamada , Kazuyoshi Maekawa , Kenichi Mori
- 优先权： JP2005-379320 20051228
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor device includes an embedded wire in a first wire trench formed in a first interlayer dielectric film, the embedded wire having a barrier metal, a first seed film, a second seed film, and a copper film. The first seed film is formed by a copper film containing metal, and the second film is formed by a copper film. The second seed film suppresses that the metal contained in the first seed film diffuses into a wiring material film in a manufacturing process.
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